MachFlex™, 31G C #18 Str BC, PVC-NYL Ins, TPE Jkt, TPE Jkt, 1000V WTTC, 600V TC-ER

Product Description MachFlex™ for High Flex, 3+1G Conductor 18AWG (105x38) Bare Copper, PVC-NYL Insulation, TPE Inner Jacket, TPE Outer Jacket, 1000V WTTC, 600V TC-ER

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Common Mode EMI Inductors

[J.W.Miller] Special Features •Reduce conductive EMI emission •High current capacity •High impedance at low frequency •Dielectric strength 3750VRMS •Coil wound on VW-1 rated plastic cased ferrite core •Operating temperature -55 to +105°C

文件：36.35 Kbytes 页数：1 Pages

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White LED Products for Bus Applications

White LED Products for Bus Applications

文件：574.46 Kbytes 页数：2 Pages

DIALIGHT

White LED Products for Bus Applications

White LED Products for Bus Applications

文件：574.46 Kbytes 页数：2 Pages

DIALIGHT

CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout

Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise. ◆ Equal access and cycle times – Commercial: 12/15/20ns – Industrial: 15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional inputs and outputs directly

文件：188.35 Kbytes 页数：9 Pages

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CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout

Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise. ◆ Equal access and cycle times – Commercial: 12/15/20ns – Industrial: 15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional inputs and outputs directly

文件：188.35 Kbytes 页数：9 Pages

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CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout

Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise. ◆ Equal access and cycle times – Commercial: 12/15/20ns – Industrial: 15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional inputs and outputs directly

文件：188.35 Kbytes 页数：9 Pages

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CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout

Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise. ◆ Equal access and cycle times – Commercial: 12/15/20ns – Industrial: 15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional inputs and outputs directly

文件：188.35 Kbytes 页数：9 Pages

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CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout

Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise. ◆ Equal access and cycle times – Commercial: 12/15/20ns – Industrial: 15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional inputs and outputs directly

文件：188.35 Kbytes 页数：9 Pages

RENESAS

瑞萨

CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout

Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise. ◆ Equal access and cycle times – Commercial: 12/15/20ns – Industrial: 15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional inputs and outputs directly

文件：188.35 Kbytes 页数：9 Pages

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