丝印：71040MRTZ；Package：8LDTDFN；Radiation Tolerant Low-Side GaN FET Driver

Features ▪ Qualified to Renesas Rad Tolerant Screening and QCI Flow (R34TB0004EU) ▪ Wide operating voltage range of 4.5V to 13.2V ▪ Up to 14.7V logic inputs (regardless of VDD level) • Inverting and non-inverting inputs ▪ Optimized to drive enhancement mode GaN FETs • Internal 4.5V regulate

文件：788.78 Kbytes 页数：23 Pages

RENESAS

瑞萨

丝印：71040MRTZ；Package：8LDTDFN；Radiation Tolerant Low-Side GaN FET Driver

Features ▪ Qualified to Renesas Rad Tolerant Screening and QCI Flow (R34TB0004EU) ▪ Wide operating voltage range of 4.5V to 13.2V ▪ Up to 14.7V logic inputs (regardless of VDD level) • Inverting and non-inverting inputs ▪ Optimized to drive enhancement mode GaN FETs • Internal 4.5V regulate

文件：788.78 Kbytes 页数：23 Pages

RENESAS

瑞萨

丝印：71040MRTZ；Package：TDFN；Radiation Tolerant Low-Side GaN FET Driver

Features • Wide operating voltage range of 4.5V to 13.2V • Up to 14.7V logic inputs (regardless of VDD level) ○ Inverting and non-inverting inputs • Optimized to drive enhancement mode GaN FETs ○ Internal 4.5V regulated gate drive voltage ○ Independent outputs for adjustable turn-on/turn-

文件：768.83 Kbytes 页数：24 Pages

RENESAS

瑞萨

丝印：71040MRTZ；Package：TDFN；Radiation Tolerant Low-Side GaN FET Driver

Features • Wide operating voltage range of 4.5V to 13.2V • Up to 14.7V logic inputs (regardless of VDD level) ○ Inverting and non-inverting inputs • Optimized to drive enhancement mode GaN FETs ○ Internal 4.5V regulated gate drive voltage ○ Independent outputs for adjustable turn-on/turn-

文件：768.83 Kbytes 页数：24 Pages

RENESAS

瑞萨

丝印：71040MRTZ；Package：8LDTDFN；Radiation Tolerant Low-Side GaN FET Driver

Features ▪ Qualified to Renesas Rad Tolerant Screening and QCI Flow (R34TB0004EU) ▪ Wide operating voltage range of 4.5V to 13.2V ▪ Up to 14.7V logic inputs (regardless of VDD level) • Inverting and non-inverting inputs ▪ Optimized to drive enhancement mode GaN FETs • Internal 4.5V regulate

文件：788.78 Kbytes 页数：23 Pages

RENESAS

瑞萨

丝印：71040MRTZ；Package：8LDTDFN；Radiation Tolerant Low-Side GaN FET Driver

Features ▪ Qualified to Renesas Rad Tolerant Screening and QCI Flow (R34TB0004EU) ▪ Wide operating voltage range of 4.5V to 13.2V ▪ Up to 14.7V logic inputs (regardless of VDD level) • Inverting and non-inverting inputs ▪ Optimized to drive enhancement mode GaN FETs • Internal 4.5V regulate

文件：788.78 Kbytes 页数：23 Pages

RENESAS

瑞萨

丝印：7101Q；Package：SOIC；LOW-DROPOUT VOLTAGE REGULATORS

Available in 5-V, 4.85-V, and 3.3-V Fixed-Output and Adjustable Versions Very Low-Dropout Voltage . . . Maximum of 32 mV at IO = 100 mA (TPS7150) Very Low Quiescent Current – Independent of Load . . . 285 μA Typ Extremely Low Sleep-State Current 0.5 μA Max 2% Tolerance Over Specified C

文件：1.02853 Mbytes 页数：41 Pages

TI

德州仪器

丝印：7101Q；Package：SOIC；LOW-DROPOUT VOLTAGE REGULATORS

Available in 5-V, 4.85-V, and 3.3-V Fixed-Output and Adjustable Versions Very Low-Dropout Voltage . . . Maximum of 32 mV at IO = 100 mA (TPS7150) Very Low Quiescent Current – Independent of Load . . . 285 μA Typ Extremely Low Sleep-State Current 0.5 μA Max 2% Tolerance Over Specified C

文件：1.02853 Mbytes 页数：41 Pages

TI

德州仪器

丝印：7101Q；Package：SOIC；LOW-DROPOUT VOLTAGE REGULATORS

Available in 5-V, 4.85-V, and 3.3-V Fixed-Output and Adjustable Versions Very Low-Dropout Voltage . . . Maximum of 32 mV at IO = 100 mA (TPS7150) Very Low Quiescent Current – Independent of Load . . . 285 μA Typ Extremely Low Sleep-State Current 0.5 μA Max 2% Tolerance Over Specified C

文件：1.02853 Mbytes 页数：41 Pages

TI

德州仪器

丝印：7101Q；Package：SOIC；LOW-DROPOUT VOLTAGE REGULATORS

Available in 5-V, 4.85-V, and 3.3-V Fixed-Output and Adjustable Versions Very Low-Dropout Voltage . . . Maximum of 32 mV at IO = 100 mA (TPS7150) Very Low Quiescent Current – Independent of Load . . . 285 μA Typ Extremely Low Sleep-State Current 0.5 μA Max 2% Tolerance Over Specified C

文件：1.02853 Mbytes 页数：41 Pages

TI

德州仪器