丝印：71026MVZ；Package：14LDTSSOP；3.3V CAN Transceiver, 1Mbps, Listen Mode, Loopback

Features ▪ Qualified to Renesas Rad Tolerant Screening and QCI Flow (R34TB0004EU) ▪ ESD protection on all pins: 5kV HBM ▪ Compatible with ISO11898-2 ▪ Operating supply range: 3.0V to 3.6V ▪ Bus pin fault protection to ±20V ▪ Three selectable driver rise and fall times ▪ High data rates up

文件：1.37029 Mbytes 页数：29 Pages

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瑞萨

丝印：71026MVZ；Package：TSSOP；3.3V CAN Transceiver, 1Mbps, Listen Mode, Loopback

Features • ESD protection on all pins: 5kV HBM • Bus pin fault protection to ±20V • Cold spare: powered down devices/nodes will not affect active devices operating in parallel • Three selectable driver rise and fall times • Full fail-safe (open, short, terminated/undriven) receiver • Quies

文件：956.97 Kbytes 页数：32 Pages

RENESAS

瑞萨

丝印：71026MVZ；Package：TSSOP；3.3V CAN Transceiver, 1Mbps, Listen Mode, Loopback

Features • ESD protection on all pins: 5kV HBM • Bus pin fault protection to ±20V • Cold spare: powered down devices/nodes will not affect active devices operating in parallel • Three selectable driver rise and fall times • Full fail-safe (open, short, terminated/undriven) receiver • Quies

文件：956.97 Kbytes 页数：32 Pages

RENESAS

瑞萨

丝印：71026MVZ；Package：14LDTSSOP；3.3V CAN Transceiver, 1Mbps, Listen Mode, Loopback

Features ▪ Qualified to Renesas Rad Tolerant Screening and QCI Flow (R34TB0004EU) ▪ ESD protection on all pins: 5kV HBM ▪ Compatible with ISO11898-2 ▪ Operating supply range: 3.0V to 3.6V ▪ Bus pin fault protection to ±20V ▪ Three selectable driver rise and fall times ▪ High data rates up

文件：1.37029 Mbytes 页数：29 Pages

RENESAS

瑞萨

丝印：71040MRTZ；Package：8LDTDFN；Radiation Tolerant Low-Side GaN FET Driver

Features ▪ Qualified to Renesas Rad Tolerant Screening and QCI Flow (R34TB0004EU) ▪ Wide operating voltage range of 4.5V to 13.2V ▪ Up to 14.7V logic inputs (regardless of VDD level) • Inverting and non-inverting inputs ▪ Optimized to drive enhancement mode GaN FETs • Internal 4.5V regulate

文件：788.78 Kbytes 页数：23 Pages

RENESAS

瑞萨

丝印：71040MRTZ；Package：8LDTDFN；Radiation Tolerant Low-Side GaN FET Driver

Features ▪ Qualified to Renesas Rad Tolerant Screening and QCI Flow (R34TB0004EU) ▪ Wide operating voltage range of 4.5V to 13.2V ▪ Up to 14.7V logic inputs (regardless of VDD level) • Inverting and non-inverting inputs ▪ Optimized to drive enhancement mode GaN FETs • Internal 4.5V regulate

文件：788.78 Kbytes 页数：23 Pages

RENESAS

瑞萨

丝印：71040MRTZ；Package：8LDTDFN；Radiation Tolerant Low-Side GaN FET Driver

Features ▪ Qualified to Renesas Rad Tolerant Screening and QCI Flow (R34TB0004EU) ▪ Wide operating voltage range of 4.5V to 13.2V ▪ Up to 14.7V logic inputs (regardless of VDD level) • Inverting and non-inverting inputs ▪ Optimized to drive enhancement mode GaN FETs • Internal 4.5V regulate

文件：788.78 Kbytes 页数：23 Pages

RENESAS

瑞萨

丝印：71040MRTZ；Package：8LDTDFN；Radiation Tolerant Low-Side GaN FET Driver

Features ▪ Qualified to Renesas Rad Tolerant Screening and QCI Flow (R34TB0004EU) ▪ Wide operating voltage range of 4.5V to 13.2V ▪ Up to 14.7V logic inputs (regardless of VDD level) • Inverting and non-inverting inputs ▪ Optimized to drive enhancement mode GaN FETs • Internal 4.5V regulate

文件：788.78 Kbytes 页数：23 Pages

RENESAS

瑞萨

丝印：71040MRTZ；Package：8LDTDFN；Radiation Tolerant Low-Side GaN FET Driver

Features ▪ Qualified to Renesas Rad Tolerant Screening and QCI Flow (R34TB0004EU) ▪ Wide operating voltage range of 4.5V to 13.2V ▪ Up to 14.7V logic inputs (regardless of VDD level) • Inverting and non-inverting inputs ▪ Optimized to drive enhancement mode GaN FETs • Internal 4.5V regulate

文件：788.78 Kbytes 页数：23 Pages

RENESAS

瑞萨

丝印：71040MRTZ；Package：TDFN；Radiation Tolerant Low-Side GaN FET Driver

Features • Wide operating voltage range of 4.5V to 13.2V • Up to 14.7V logic inputs (regardless of VDD level) ○ Inverting and non-inverting inputs • Optimized to drive enhancement mode GaN FETs ○ Internal 4.5V regulated gate drive voltage ○ Independent outputs for adjustable turn-on/turn-

文件：768.83 Kbytes 页数：24 Pages

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瑞萨