ISL71040MEV1Z中文资料瑞萨数据手册PDF规格书

厂商型号	ISL71040MEV1Z
功能描述	Radiation Tolerant Low-Side GaN FET Driver
丝印标识	71040MRTZ
封装外壳	8LDTDFN
文件大小	788.78 Kbytes
页面数量	23 页
生产厂商	Renesas Technology Corp
企业简称	RENESAS【瑞萨】
中文名称	瑞萨科技有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-8-4 14:41:00
人工找货	ISL71040MEV1Z价格和库存，欢迎联系客服免费人工找货

特性 Features

▪ Qualified to Renesas Rad Tolerant Screening and

QCI Flow (R34TB0004EU)

▪ Wide operating voltage range of 4.5V to 13.2V

▪ Up to 14.7V logic inputs (regardless of VDD level)

• Inverting and non-inverting inputs

▪ Optimized to drive enhancement mode GaN FETs

• Internal 4.5V regulated gate drive voltage

• Independent outputs for adjustable

turn-on/turn-off speeds

▪ NiPdAu-Ag Lead finish (Sn-free, Pb-free)

▪ Moisture Sensitivity Level (MSL) Rating: 1

▪ Passes NASA Low Outgassing Specifications

▪ Full military temperature range operation

• TA = -55°C to +125°C

• TJ = -55°C to +150°C

▪ TID Radiation Lot Acceptance Testing (LDR:

<0.01rad(Si)/s)

• ISL71040M30RTZ: 30krad(Si)

• ISL71040M50RTZ: 50krad(Si)

▪ SEE Characterization

• No DSEE with VDD = 16.5V at 43MeV•cm2/mg

• SET ≤15μm2 at 43MeV•cm2/mg