ISL71040MRTZ-T中文资料瑞萨数据手册PDF规格书

厂商型号	ISL71040MRTZ-T
功能描述	Radiation Tolerant Low-Side GaN FET Driver
丝印标识	71040MRTZ
封装外壳	TDFN
文件大小	768.83 Kbytes
页面数量	24 页
生产厂商	Renesas Technology Corp
企业简称	RENESAS【瑞萨】
中文名称	瑞萨科技有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-8-2 20:00:00
人工找货	ISL71040MRTZ-T价格和库存，欢迎联系客服免费人工找货

特性 Features

• Wide operating voltage range of 4.5V to 13.2V

• Up to 14.7V logic inputs (regardless of VDD

level)

○ Inverting and non-inverting inputs

• Optimized to drive enhancement mode GaN

FETs

○ Internal 4.5V regulated gate drive voltage

○ Independent outputs for adjustable

turn-on/turn-off speeds

• NiPdAu-Ag Lead finish (Sn-free, Pb-free)

• Moisture Sensitivity Level (MSL) Rating: 1

• Passes NASA Low Outgassing Specifications

• Full military temperature range operation

○ TA = -55°C to +125°C

○ TJ = -55°C to +150°C

• Characterized radiation levels

○ Low Dose Rate (LDR) <0.01rad(Si)/s: 30krad(Si)

○ No SEB/L, VDD = 16.5V: 43MeV•cm2/mg

Applications

• Flyback and forward converters

• Boost and PFC converters

• Secondary synchronous FET drivers