CoolMOS Power Transistor

文件：274.98 Kbytes 页数：10 Pages

Infineon

英飞凌

N-Channel 650 V (D-S) MOSFET

文件：1.0859 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

丝印：6R280C6；Package：PG-TO220FullPAK；Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETS, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offere

文件：1.59291 Mbytes 页数：19 Pages

Infineon

英飞凌

丝印：6R280E6；Package：PG-TO220FullPAK；600V CoolMOS E6 Power Transistor

Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devi

文件：1.9811 Mbytes 页数：17 Pages

Infineon

英飞凌

丝印：6R280C6；Package：PG-TO263；Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETS, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offere

文件：1.59291 Mbytes 页数：19 Pages

Infineon

英飞凌

丝印：6R280C6；Package：PG-TO220；Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETS, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offere

文件：1.59291 Mbytes 页数：19 Pages

Infineon

英飞凌

丝印：6R280E6；Package：PG-TO220；600V CoolMOS E6 Power Transistor

Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devi

文件：1.9811 Mbytes 页数：17 Pages

Infineon

英飞凌

丝印：6R280C6；Package：PG-TO247；Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETS, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offere

文件：1.59291 Mbytes 页数：19 Pages

Infineon

英飞凌

丝印：6R280E6；Package：PG-TO247；600V CoolMOS E6 Power Transistor

Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devi

文件：1.9811 Mbytes 页数：17 Pages

Infineon

英飞凌

丝印：6R299P；Package：PG-TO220FP；CoolMOS짰 Power Transistor

文件：377.13 Kbytes 页数：10 Pages

Infineon

英飞凌