丝印：6R2；SLIM INDUCTOR-RoHS

文件：179.46 Kbytes 页数：3 Pages

FENGJUI

峰瑞科技

丝印：6R2；SMD POWER INDUCTOR-RoHS

文件：216.4 Kbytes 页数：3 Pages

FENGJUI

峰瑞科技

丝印：6R2；SMD POWER INDUCTOR-RoHS

文件：306.31 Kbytes 页数：7 Pages

FENGJUI

峰瑞科技

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETS, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offere

文件：1.59291 Mbytes 页数：19 Pages

Infineon

英飞凌

600V CoolMOS E6 Power Transistor

Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devi

文件：1.9811 Mbytes 页数：17 Pages

Infineon

英飞凌

CoolMOS Power Transistor

CoolMOS® Power Transistor Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: Hard swi

文件：334.48 Kbytes 页数：10 Pages

Infineon

英飞凌

CoolMOS Power Transistor

CoolMOS® Power Transistor Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: Hard swi

文件：554.18 Kbytes 页数：10 Pages

Infineon

英飞凌

SCHOTTKY RECTIERS SILICON RECTIFIER DIODES

文件：48.9 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Metal Oxide Semiconductor Field Effect Transistor

文件：1.1053 Mbytes 页数：17 Pages

Infineon

英飞凌

丝印：D2PAK；Package：TO-263；N-Channel 650 V (D-S) MOSFET

文件：1.03898 Mbytes 页数：8 Pages

VBSEMI

微碧半导体