丝印：6P10；Package：PDFN3x3-8L；MOSFET

Features - Advanced trench technology. - Low input capacitance. - Fast switching speed.

文件：547.48 Kbytes 页数：6 Pages

COMCHIP

典琦

TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.66 OHM

TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount P–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery

文件：261.769 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

P CHANNEL ENHANCEMENT MODE POWER FIELD EFFECT TRANSISTORS

[G E SOLID STATE]

文件：445.58 Kbytes 页数：8 Pages

ETCList of Unclassifed Manufacturers

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P CHANNEL ENHANCEMENT MODE POWER FIELD EFFECT TRANSISTORS

[G E SOLID STATE]

文件：445.58 Kbytes 页数：8 Pages

ETCList of Unclassifed Manufacturers

未分类制造商