丝印：6P10；Package：PDFN3x3-8L；MOSFET

Features - Advanced trench technology. - Low input capacitance. - Fast switching speed.

文件：547.48 Kbytes 页数：6 Pages

COMCHIP

典琦

P-Channel Enhancement Mode Power MOSFET

文件：729.56 Kbytes 页数：5 Pages

KERSEMI

P-Channel Enhancement Mode Power MOSFET

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HUILIDAShenzhen hui lida electronic co., LTD

汇利达广东汇利达半导体有限公司

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= -6A@ TC=25℃ ·Drain Source Voltage- : VDSS= -100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.66Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter

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ISC

无锡固电