丝印：6N8；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：496.14 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：6N8；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：495.13 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：6N8；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：491.19 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：6N800；Package：TO-252；N-Channel Super Junction Power MOSFET III

Features New technology for high voltage device Low on-resistance and low conduction losses Small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant

文件：1.16032 Mbytes 页数：8 Pages

RECTRON

丝印：6N800；Package：TO-263；N-Channel Super Junction Power MOSFET III

Features New technology for high voltage device Low on-resistance and low conduction losses. small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant

文件：647.22 Kbytes 页数：10 Pages

RECTRON

丝印：6N800；Package：TO-251；N-Channel Super Junction Power MOSFET III

Features Now technology for high voltage device Low on-resistance and low conduction losses Smal package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant

文件：861.75 Kbytes 页数：8 Pages

RECTRON

丝印：6N800；Package：TO-252；N-Channel Super Junction Power MOSFET III

Features Now technology for high voltage device Low on-resistance and low conduction losses Smal package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant

文件：861.75 Kbytes 页数：8 Pages

RECTRON

丝印：6N800；Package：TO-220F；N-Channel Super Junction Power MOSFET III

Features New technology for high voltage device Low on-resistance and low conduction losses. small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant

文件：647.22 Kbytes 页数：10 Pages

RECTRON

丝印：6N800；Package：TO-220；N-Channel Super Junction Power MOSFET III

Features New technology for high voltage device Low on-resistance and low conduction losses. small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant

文件：647.22 Kbytes 页数：10 Pages

RECTRON

丝印：6N8R2AL；Package：TO-252；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：72.94 Kbytes 页数：6 Pages

A-POWER

富鼎先进电子