丝印：6N800；Package：TO-252；N-Channel Super Junction Power MOSFET III

Features New technology for high voltage device Low on-resistance and low conduction losses Small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant

文件：1.16032 Mbytes 页数：8 Pages

RECTRON

丽正国际

丝印：6N800；Package：TO-263；N-Channel Super Junction Power MOSFET III

Features New technology for high voltage device Low on-resistance and low conduction losses. small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant

文件：647.22 Kbytes 页数：10 Pages

RECTRON

丽正国际

丝印：6N800；Package：TO-251；N-Channel Super Junction Power MOSFET III

Features Now technology for high voltage device Low on-resistance and low conduction losses Smal package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant

文件：861.75 Kbytes 页数：8 Pages

RECTRON

丽正国际

丝印：6N800；Package：TO-252；N-Channel Super Junction Power MOSFET III

Features Now technology for high voltage device Low on-resistance and low conduction losses Smal package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant

文件：861.75 Kbytes 页数：8 Pages

RECTRON

丽正国际

丝印：6N800；Package：TO-220F；N-Channel Super Junction Power MOSFET III

Features New technology for high voltage device Low on-resistance and low conduction losses. small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant

文件：647.22 Kbytes 页数：10 Pages

RECTRON

丽正国际

丝印：6N800；Package：TO-220；N-Channel Super Junction Power MOSFET III

Features New technology for high voltage device Low on-resistance and low conduction losses. small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant

文件：647.22 Kbytes 页数：10 Pages

RECTRON

丽正国际