BUK6D38-30E

Marking：6B；Package：DFN2020MD-6；30 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inamediumpowerDFN2020MD-6 (SOT1220)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •ExtendedtemperaturerangeTj=175°C •Sidewettableflanksforo

DTA603

Marking：6B；Package：SC-89；Bias Resistor Transistors

BiasResistorTransistors PNPSiliconSurfaceMountTransistors withMonolithicBiasResistorNetwork Thisnewseriesofdigitaltransistorsisdesignedtoreplaceasingledeviceanditsexternalresistorbiasnetwork.TheBRT(BiasResistorTransistor)containsasingletransistorwithamono

LDTA124EET1G

Marking：6B；Package：SC-89；Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

BiasResistorTransistors PNPSiliconSurfaceMountTransistors withMonolithicBiasResistorNetwork Thisnewseriesofdigitaltransistorsisdesignedtoreplaceasingledeviceanditsexternalresistorbiasnetwork.TheBRT(BiasResistorTransistor)containsasingletransistorwithamono

LDTA124EET1G

Marking：6B；Package：SC-89；Bias Resistor Transistors

BiasResistorTransistors PNPSiliconSurfaceMountTransistors withMonolithicBiasResistorNetwork Thisnewseriesofdigitaltransistorsisdesignedtoreplaceasingledeviceanditsexternalresistorbiasnetwork.TheBRT(BiasResistorTransistor)containsasingletransistorwithamono

MM1Z47

Marking：6B；Package：SOD-123F；SILICON PLANAR ZENER DIODES

Features •Totalpowerdissipation:max.500mW •Smallplasticpackagesuitableforsurfacemounteddesign •Toleranceapproximately±5

MM1Z47

Marking：6B；Silicon Planar Zener Diodes

FEATURES •Totalpowerdissipation:Max.500mW. •Widezenerreversevoltagerange2.0Vto75V. •Smallplasticpackagesuitableforsurfacemounteddesign. •Toleranceapproximately±5

MMBF5484

Marking：6B；Package：SOT-23；N-Channel RF Amplifier

N-ChannelRFAmplifier ThisdeviceisdesignedprimarilyforelectronicswitchingapplicationssuchaslowOnResistanceanalogswitching. SourcedfromProcess50.

MMBF5484

Marking：6B；Package：SOT-23；SFET RF,VHF, UHF, Amplitiers

N-ChannelRFAmplifier •ThisdeviceisdesignedforRFamplifierandmixerapplications operatingupto450MHz,andforanalogswitchingrequiringlow capacitance. •Sourcedfromprocess50.

NHUMB10

Marking：6B；Package：SC-88；80 V, 100 mA PNP/PNP resistor-equipped double transistors

Featuresandbenefits •100mAoutputcurrentcapability •Highbreakdownvoltage •Built-inresistors •Simplifiescircuitdesign •Reducescomponentcount •Reducespickandplacecosts •AEC-Q101qualified

NHUMB10

Marking：6B；Package：SC-88；80 V, 100 mA PNP/PNP resistor-equipped double transistors

1.Generaldescription PNP/PNPResistor-EquippeddoubleTransistor(RET)familyinaverysmallSOT363(SC-88) Surface-MountedDevice(SMD)plasticpackage. Table1.Productoverview TypenumberR1R2Package kΩkΩNexperiaJEITA NPN/NPN complement: NPN/PNP complement: NHUMB102.247NHU