丝印：6BC；Package：DO221-AC；600 W TVS in SMA Flat

Features • Peak pulse power: 600 W (10/1000 μs) and 4 kW (8/20 μs) • Flat and thin package: 1 mm • Stand-off voltage range from 5 V to 188 V • Unidirectional type • Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C • Operating Tj max: 175 °C • High power capability at Tj max.: up to 40

文件：663.52 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：6BCT125A；Package：SOIC；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

State-of-the-Art BiCMOS Design Significantly Reduces ICCZ High-Impedance State During Power-Up and Power-Down 3-State Outputs Drive Bus Lines or Buffer-Memory Address Registers ESD Protection Exceeds 2000 V Per MIL-STD-883C Method 3015 Package Options Include Plastic Small-Outline (D) Pac

文件：408.28 Kbytes 页数：10 Pages

TI

德州仪器

丝印：6BCT125A；Package：SOIC；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

State-of-the-Art BiCMOS Design Significantly Reduces ICCZ High-Impedance State During Power-Up and Power-Down 3-State Outputs Drive Bus Lines or Buffer-Memory Address Registers ESD Protection Exceeds 2000 V Per MIL-STD-883C Method 3015 Package Options Include Plastic Small-Outline (D) Pac

文件：408.28 Kbytes 页数：10 Pages

TI

德州仪器

丝印：6BCT126A；Package：SOIC；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

State-of-the-Art BiCMOS Design Significantly Reduces ICCZ 3-State Outputs Drive Bus Lines or Buffer-Memory Address Registers ESD Protection Exceeds 2000 V Per MIL-STD-883 Method 3015 High-Impedance State During Power Up and Power Down Package Options Include Plastic Small-Outline (D) and

文件：354.76 Kbytes 页数：10 Pages

TI

德州仪器

丝印：6BCT126A；Package：SOIC；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

State-of-the-Art BiCMOS Design Significantly Reduces ICCZ 3-State Outputs Drive Bus Lines or Buffer-Memory Address Registers ESD Protection Exceeds 2000 V Per MIL-STD-883 Method 3015 High-Impedance State During Power Up and Power Down Package Options Include Plastic Small-Outline (D) and

文件：354.76 Kbytes 页数：10 Pages

TI

德州仪器

丝印：6BCT244；Package：SOIC；OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS

State-of-the-Art BiCMOS Design Significantly Reduces ICCZ 3-State Outputs Drive Bus Lines or Buffer-Memory Address Registers P-N-P Inputs Reduce DC Loading High-Impedance State During Power Up and Power Down Package Options Include Plastic Small-Outline (DW) Packages and Standard Plastic

文件：465.22 Kbytes 页数：9 Pages

TI

德州仪器

丝印：6BCT244；Package：SOIC；OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS

State-of-the-Art BiCMOS Design Significantly Reduces ICCZ 3-State Outputs Drive Bus Lines or Buffer-Memory Address Registers P-N-P Inputs Reduce DC Loading High-Impedance State During Power Up and Power Down Package Options Include Plastic Small-Outline (DW) Packages and Standard Plastic

文件：465.22 Kbytes 页数：9 Pages

TI

德州仪器

丝印：6BCT245；Package：SOIC；OCTAL BUS TRANSCEIVER WITH 3-STATE OUTPUTS

BiCMOS Design Significantly Reduces ICCZ 3-State True Outputs Drive Bus Lines Directly High-Impedance State During Power Up and Power Down ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015 Package Options Include Plastic Small-Outline (DW) Packages and Standard Plastic 300-mil D

文件：477.52 Kbytes 页数：10 Pages

TI

德州仪器

丝印：6BCT245；Package：SOIC；OCTAL BUS TRANSCEIVER WITH 3-STATE OUTPUTS

BiCMOS Design Significantly Reduces ICCZ 3-State True Outputs Drive Bus Lines Directly High-Impedance State During Power Up and Power Down ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015 Package Options Include Plastic Small-Outline (DW) Packages and Standard Plastic 300-mil D

文件：477.52 Kbytes 页数：10 Pages

TI

德州仪器

丝印：6BCT25244；Package：SOIC；25-ohm OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS

State-of-the-Art BiCMOS Design Significantly Reduces ICCZ High-Impedance State During Power Up and Power Down ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Designed to Facilitate Incident-Wave Switching for Line Impedanc

文件：200.02 Kbytes 页数：8 Pages

TI

德州仪器