丝印：6BCT25244；Package：SOIC；25-ohm OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS

State-of-the-Art BiCMOS Design Significantly Reduces ICCZ High-Impedance State During Power Up and Power Down ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Designed to Facilitate Incident-Wave Switching for Line Impedanc

文件：200.02 Kbytes 页数：8 Pages

TI

德州仪器

丝印：6BCT25244；Package：SOIC；25-ohm OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS

State-of-the-Art BiCMOS Design Significantly Reduces ICCZ High-Impedance State During Power Up and Power Down ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Designed to Facilitate Incident-Wave Switching for Line Impedanc

文件：200.02 Kbytes 页数：8 Pages

TI

德州仪器