丝印：6BCT126A；Package：SOIC；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

State-of-the-Art BiCMOS Design Significantly Reduces ICCZ 3-State Outputs Drive Bus Lines or Buffer-Memory Address Registers ESD Protection Exceeds 2000 V Per MIL-STD-883 Method 3015 High-Impedance State During Power Up and Power Down Package Options Include Plastic Small-Outline (D) and

文件：354.76 Kbytes 页数：10 Pages

TI

德州仪器

丝印：6BCT126A；Package：SOIC；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

State-of-the-Art BiCMOS Design Significantly Reduces ICCZ 3-State Outputs Drive Bus Lines or Buffer-Memory Address Registers ESD Protection Exceeds 2000 V Per MIL-STD-883 Method 3015 High-Impedance State During Power Up and Power Down Package Options Include Plastic Small-Outline (D) and

文件：354.76 Kbytes 页数：10 Pages

TI

德州仪器