丝印：6BCT125A；Package：SOIC；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

State-of-the-Art BiCMOS Design Significantly Reduces ICCZ High-Impedance State During Power-Up and Power-Down 3-State Outputs Drive Bus Lines or Buffer-Memory Address Registers ESD Protection Exceeds 2000 V Per MIL-STD-883C Method 3015 Package Options Include Plastic Small-Outline (D) Pac

文件：408.28 Kbytes 页数：10 Pages

TI

德州仪器

丝印：6BCT125A；Package：SOIC；QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS

State-of-the-Art BiCMOS Design Significantly Reduces ICCZ High-Impedance State During Power-Up and Power-Down 3-State Outputs Drive Bus Lines or Buffer-Memory Address Registers ESD Protection Exceeds 2000 V Per MIL-STD-883C Method 3015 Package Options Include Plastic Small-Outline (D) Pac

文件：408.28 Kbytes 页数：10 Pages

TI

德州仪器