| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
65F6110 | Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso 文件：3.85934 Mbytes 页数：20 Pages | Infineon 英飞凌 | Infineon | |
丝印：65F6110；Package：PG-TO220FullPAK；Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso 文件：3.85934 Mbytes 页数：20 Pages | Infineon 英飞凌 | Infineon | ||
丝印：65F6110；Package：PG-TO263；Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso 文件：3.85934 Mbytes 页数：20 Pages | Infineon 英飞凌 | Infineon | ||
丝印：65F6110；Package：PG-TO262；Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso 文件：3.85934 Mbytes 页数：20 Pages | Infineon 英飞凌 | Infineon | ||
丝印：65F6110；Package：PG-TO220；Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso 文件：3.85934 Mbytes 页数：20 Pages | Infineon 英飞凌 | Infineon | ||
丝印：65F6110；Package：PG-TO247；Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso 文件：3.85934 Mbytes 页数：20 Pages | Infineon 英飞凌 | Infineon | ||
丝印：65F6110A；Package：PG-TO263； 650V CoolMos CFDA Power Transistor 文件：2.33045 Mbytes 页数：16 Pages | Infineon 英飞凌 | Infineon | ||
丝印：65F6110A；Package：PG-TO220； 650V CoolMos CFDA Power Transistor 文件：2.33045 Mbytes 页数：16 Pages | Infineon 英飞凌 | Infineon | ||
丝印：65F6110A；Package：PG-TO247； 650V CoolMos CFDA Power Transistor 文件：2.33045 Mbytes 页数：16 Pages | Infineon 英飞凌 | Infineon |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
标准封装 |
13048 |
原厂渠道供应,大量现货,原型号开票。 |
询价 | ||
PFC/节能元件 |
23+ |
TO-220F |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
INFINEON |
22+ |
TO-262 |
8000 |
终端可免费供样,支持BOM配单 |
询价 | ||
Infineon(英飞凌) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
INFINEON/英飞凌 |
23+ |
TO-262 |
6000 |
专注配单,只做原装进口现货 |
询价 | ||
INFINEON |
23+ |
TO-262 |
7000 |
询价 | |||
infineon/ |
TO-262 |
22+ |
8000 |
终端免费提供样品 可开13%增值税发票 |
询价 | ||
INFINEON/英飞凌 |
23+ |
TO247 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | ||
Infineon/英飞凌 |
24+ |
T0247 |
3331 |
现货热卖中 |
询价 | ||
24+ |
TO-247 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
询价 |
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