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型号	下载订购	功能描述	制造商上传企业	LOGO
65F6110	文件：3.85934 Mbytes Page：20 Pages	Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso 文件：3.85934 Mbytes 页数：20 Pages	INFINEON 英飞凌	INFINEON
IPA65R110CFD	文件：3.85934 Mbytes Page：20 Pages	丝印：65F6110；Package：PG-TO220FullPAK；Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso 文件：3.85934 Mbytes 页数：20 Pages	INFINEON 英飞凌	INFINEON
IPB65R110CFD	文件：3.85934 Mbytes Page：20 Pages	丝印：65F6110；Package：PG-TO263；Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso 文件：3.85934 Mbytes 页数：20 Pages	INFINEON 英飞凌	INFINEON
IPI65R110CFD	文件：3.85934 Mbytes Page：20 Pages	丝印：65F6110；Package：PG-TO262；Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso 文件：3.85934 Mbytes 页数：20 Pages	INFINEON 英飞凌	INFINEON
IPP65R110CFD	文件：3.85934 Mbytes Page：20 Pages	丝印：65F6110；Package：PG-TO220；Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso 文件：3.85934 Mbytes 页数：20 Pages	INFINEON 英飞凌	INFINEON
IPW65R110CFD	文件：3.85934 Mbytes Page：20 Pages	丝印：65F6110；Package：PG-TO247；Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso 文件：3.85934 Mbytes 页数：20 Pages	INFINEON 英飞凌	INFINEON
IPB655R110CFDA	文件：2.33045 Mbytes Page：16 Pages	丝印：65F6110A；Package：PG-TO263；650V CoolMos CFDA Power Transistor 文件：2.33045 Mbytes 页数：16 Pages	INFINEON 英飞凌	INFINEON
IPP655R110CFDA	文件：2.33045 Mbytes Page：16 Pages	丝印：65F6110A；Package：PG-TO220；650V CoolMos CFDA Power Transistor 文件：2.33045 Mbytes 页数：16 Pages	INFINEON 英飞凌	INFINEON
IPW655R110CFDA	文件：2.33045 Mbytes Page：16 Pages	丝印：65F6110A；Package：PG-TO247；650V CoolMos CFDA Power Transistor 文件：2.33045 Mbytes 页数：16 Pages	INFINEON 英飞凌	INFINEON

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	65F6110	Infineon(英飞凌)	24+	标准封装	13048	原厂渠道供应,大量现货,原型号开票。	询价
深圳市威尔健半导体有限公司	65F6110	PFC/节能元件	23+	TO-220F	69820	终端可以免费供样,支持BOM配单!	询价
深圳市河锋鑫科技有限公司	65F6110	INFINEON	22+	TO-262	8000	终端可免费供样,支持BOM配单	询价
深圳市安富世纪电子有限公司	65F6110	INFINEON/英飞凌	23+	TO-262	6000	专注配单,只做原装进口现货	询价
天津市博通航睿技术有限公司	65F6110	INFINEON	23+	TO-262	7000		询价
深圳和润天下电子科技有限公司	65F6110	infineon/	TO-262	22+	8000	终端免费提供样品可开13%增值税发票	询价
贸泽芯城（深圳）电子科技有限公司	65F6110A	INFINEON/英飞凌	23+	TO247	5000	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳市福田区富丽电子商行	65F6110A	Infineon/英飞凌	24+	T0247	3331	现货热卖中	询价
深圳市华睿芯科技有限公司	65F6150		24+	TO-247	20000	全新原厂原装，进口正品现货，正规渠道可含税！！	询价
深圳市凌旭科技有限公司	65F6150	INFINEON/英飞凌	21+	TO-247	1062	只做原装正品,不止网上数量,欢迎电话微信查询!	询价

更多65F6110供应商更新时间2026-1-24 23:00:00

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