65R420说明书PDF资料原装现货可易亚半导体-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业
65R420	文件：461.65 Kbytes Page：6 Pages	11A竊?50V N-CHANNEL MOSFET	KIAGuangdong Keyia Semiconductor Technology Co., Ltd 可易亚半导体广东可易亚半导体科技有限公司
IIPP65R420CFD	文件：339.05 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.42Ω·Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IIPW65R420CFD	文件：335.46 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •FastSwitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤420mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IPA65R420CFD	文件：4.60565 Mbytes Page：21 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPA65R420CFD	文件：7.64783 Mbytes Page：21 Pages	650VCoolMOSC6CFDPowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPA65R420CFD	文件：270.11 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220FPackage •DrainSourceVoltage- :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.42Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplicati	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IPB65R420CFD	文件：4.60565 Mbytes Page：21 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPB65R420CFD	文件：189.44 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IPB65R420CFD	文件：7.64783 Mbytes Page：21 Pages	650VCoolMOSC6CFDPowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPD65R420CFD	文件：7.64783 Mbytes Page：21 Pages	650VCoolMOSC6CFDPowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPD65R420CFD	文件：4.60565 Mbytes Page：21 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPD65R420CFDA	文件：1.31097 Mbytes Page：14 Pages	MetalOxideSemiconductorFieldEffectTransistor	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPI65R420CFD	文件：4.60565 Mbytes Page：21 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPI65R420CFD	文件：7.64783 Mbytes Page：21 Pages	650VCoolMOSC6CFDPowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPI65R420CFD	文件：331.5 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.42Ω·Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IPP65R420CFD	文件：7.64783 Mbytes Page：21 Pages	650VCoolMOSC6CFDPowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPP65R420CFD	文件：4.60565 Mbytes Page：21 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPP65R420CFD	文件：339.05 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.42Ω·Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IPW65R420CFD	文件：335.46 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •FastSwitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤420mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IPW65R420CFD	文件：7.64783 Mbytes Page：21 Pages	650VCoolMOSC6CFDPowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司

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供应商	型号	品牌	批号	封装	库存	备注	价格
贸泽芯城（深圳）电子科技有限公司	65R420S1	TRUESEMI/信安	2021+	TO-220F	52000	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳市向鸿伟业电子有限公司	65R570	LONTEN	17+	TO-220	25500	门市原装现货!支持实单,一片起卖!	询价
深圳市百视威讯电子科技有限公司	65R600Q		23+	N/A	59810	正品授权货源可靠	询价
深圳市科恒伟业电子有限公司	65R600Q	MAGNACHIP	1937+	TO220F	9852	只做进口原装正品现货!或订货假一赔十!	询价
深圳市汇莱威科技有限公司	65R600Q		MAGNACHIP	TO220F	608900	原包原标签100%进口原装常备现货!	询价
深圳市安富世纪电子有限公司	65R6380	INFINEON	23+	TO-252	8000	只做原装现货	询价
深圳市豪迈兴电子有限公司	65R77		2339+		25843	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市亿智腾科技有限公司	65R77		2021+		6540	原装现货/欢迎来电咨询	询价
深圳市威尔健半导体有限公司	65R77	N/S	23+	QFN40	50000	全新原装正品现货,支持订货	询价
深圳市智创诚芯电子科技有限公司	65R77		22+	QFN-40	25000	原装现货,价格优惠,假一罚十	询价

更多65R420供应商更新时间2024-4-27 11:10:00

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