N-Channel MOSFET Transistor

• DESCRITION • Fast Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤420mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.46 Kbytes 页数：2 Pages

ISC

无锡固电

650V CoolMOS C6 CFD Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso

文件：7.64783 Mbytes 页数：21 Pages

Infineon

英飞凌

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso

文件：4.60565 Mbytes 页数：21 Pages

Infineon

英飞凌

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F Package • Drain Source Voltage- : VDSS=650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.42Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applicati

文件：270.11 Kbytes 页数：2 Pages

ISC

无锡固电