丝印：5N500；Package：TO-251；N-Channel Enhancement Mode Power MOSFET

General Features VDS =500V,ID =5A RDS(ON)

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丝印：5N50AT；Package：TO-220AB；5A 500V N-channel enhanced field effect transistor

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佑风微

丝印：5N50AF；Package：TO-220F；5A 500V N-channel enhanced field effect transistor

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丝印：5N50AS；Package：TO-263；5A 500V N-channel enhanced field effect transistor

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丝印：5N50AS；Package：TO-263；5A 500V N-channel enhanced field effect transistor

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丝印：5N50AMJ；Package：TO-251；5A 500V N-channel enhanced field effect transistor

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丝印：5N50AD；Package：TO-252；5A 500V N-channel enhanced field effect transistor

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5A, 500V N-CHANNEL POWER MOSFET

The UTC 5N50K-MT is an N-channel power MOSFET adoptingUTC’s advanced technology to provide customers with DMOS,planar stripe technology. This technology is designed to meet therequirements of the minimum on-state resistance and perfectswitching performance. It also can withstand high energy pulse in • RDS(ON) < 1.4Ω @VGS = 10 V\n• High switching speed;

UTC

友顺

高压MOSFET

PINGWEI

平伟