500V N-CHANNEL POWER MOSFET

文件：177.34 Kbytes 页数：6 Pages

UTC

友顺

5A, 500V N-CHANNEL POWER MOSFET

文件：201.77 Kbytes 页数：6 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件：2.93481 Mbytes 页数：8 Pages

SUNMATE

森美特

isc N-Channel MOSFET Transistor

文件：291.11 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 650V (D-S) Power MOSFET

文件：1.07716 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

5A, 500V N-CHANNEL  POWER MOSFET

The UTC 5N50 is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the minimum on-state resistance and perfect switching performance. It also can withstand high energy pulse in • RDS(ON) = 1.4Ω @VGS = 10 V \n• High switching speed;

UTC

友顺

丝印：5N50；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

General Features Vds =500 Id =5A Rds(on)

文件：506.96 Kbytes 页数：5 Pages

RECTRON

丽正

丝印：5N50；Package：TO-220F；N-Channel Power MOSFET

General Features VDS =500V,ID =5A RDS(ON)

文件：438.49 Kbytes 页数：5 Pages

RECTRON

丽正

N-Channel 650V (D-S) Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correcti

文件：1.19767 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

文件：628.88 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体