丝印：5N08031；Package：PG-TDSON-8；OptiMOS™-5 Power-Transistor

Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100 Avalanche tested

文件：781.44 Kbytes 页数：10 Pages

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丝印：5N08L140；Package：PG-TDSON-8-33；OptiMOS™-5 Power Transistor

Features • OptiMOS™ power MOSFET for automotive applications • N-channel - Enhancement mode - Logic Level • MSL1 up to 260°C peak reflow • 175 °C operating temperature • Green product (RoHS compliant) • 100 Avalanche tested

文件：1.18843 Mbytes 页数：10 Pages

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丝印：5N08N012；Package：PG-HSOG-4-1；Automotive MOSFET OptiMOS™ 5 Power-Transistor

Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL2 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avalan

文件：1.28804 Mbytes 页数：12 Pages

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丝印：5N08N013；Package：PG-HSOG-4-1；Automotive MOSFET OptiMOS™ 5 Power-Transistor

Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL2 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avalan

文件：1.28814 Mbytes 页数：12 Pages

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丝印：5N08011；Package：PG-HDSOP-16-2；OptiMOS™-5 Power-Transistor

Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) •

文件：1.02385 Mbytes 页数：10 Pages

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丝印：5N0812L；Package：PG-HSOF-8-2；Automotive MOSFET OptiMOS™ 5 Power-Transistor

Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • Linear FET (LINFET) and low RDS(on) FET (ONFET) in one package • Dedicated gate pins for both M

文件：1.38635 Mbytes 页数：14 Pages

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丝印：5N08026；Package：PG-HSOF-5-4；Automotive MOSFET OptiMOS??5 Power-Transistor

文件：2.24134 Mbytes 页数：12 Pages

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丝印：5N08021；Package：PG-HSOF-5-4；Automotive MOSFET

文件：2.23852 Mbytes 页数：12 Pages

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丝印：5N08018；Package：PG-HSOF-5-4；Automotive MOSFET

文件：2.231 Mbytes 页数：12 Pages

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丝印：5N08034；Package：PG-TDSON-8-34；OptiMOS??5 Power Transistor

文件：1.296 Mbytes 页数：10 Pages

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