丝印：5N0812L；Package：PG-HSOF-8-2；Automotive MOSFET OptiMOS™ 5 Power-Transistor

Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • Linear FET (LINFET) and low RDS(on) FET (ONFET) in one package • Dedicated gate pins for both M

文件：1.38635 Mbytes 页数：14 Pages

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英飞凌

80 V、N 通道、1.15 mΩ 或 9.0 mΩ（最大值）、汽车 MOSFET、TOLL（10x12）、OptiMOS ™ 5

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Infineon

英飞凌

Automotive MOSFET OptiMOS™ 5 Power-Transistor

Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL2 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avalan

文件：1.28804 Mbytes 页数：12 Pages

Infineon

英飞凌