丝印：5J；Package：TSSOP5；Low-power 2-input AND gate with voltage-level translator

1. General description The 74AUP1T08-Q100 provides the single 2-input AND function. This device ensures a very low static and dynamic power consumption across the entire VCC range from 2.3 V to 3.6 V. The 74AUP1T08-Q100 is designed for logic-level translation applications with input switching l

文件：220.91 Kbytes 页数：13 Pages

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丝印：5J；Package：SOT-89；NPN Transistor

Features ● Low saturation voltage ● Excellent current-to-gain characteristics

文件：593.51 Kbytes 页数：3 Pages

PJSEMI

平晶半导体

丝印：5J；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：328.92 Kbytes 页数：14 Pages

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丝印：5J；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：329.42 Kbytes 页数：14 Pages

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丝印：5J；Package：SOD-523；SCHOTTKY BARRIER DIODE

● Features Extremelysmall surface mounting type. (SC-79/SOD523) Extremely Fast Switching Speed Extremely Low Forward Voltage 0.6 V (max) @ IF = 200mA Low Reverse Current ● Applications Low current rectification and high speed switching ● Construction Silicon epitaxial pla

文件：819.87 Kbytes 页数：3 Pages

LEIDITECH

雷卯电子

丝印：5J；Package：SOD-523；SCHOTTKY BARRIER DIODE

● Features Extremelysmall surface mounting type. (SC-79/SOD523) Extremely Fast Switching Speed Extremely Low Forward Voltage 0.6 V (max) @ IF = 200mA Low Reverse Current ● Applications Low current rectification and high speed switching ● Construction Silicon epitaxial pla

文件：819.87 Kbytes 页数：3 Pages

LEIDITECH

雷卯电子

丝印：5J；Package：SOD-123F；SILICON PLANAR ZENER DIODES

Features • Total power dissipation: max. 500 mW • Small plastic package suitable for surface mounted design • Tolerance approximately ± 5

文件：272.29 Kbytes 页数：4 Pages

SEMTECH_ELEC

先之科半导体

丝印：5J；Silicon Planar Zener Diodes

FEATURES • Total power dissipation: Max. 500mW. • Wide zener reverse voltage range 2.0V to 75V. • Small plastic package suitable for surface mounted design. • Tolerance approximately±5

文件：776.59 Kbytes 页数：2 Pages

JUXING

广东钜兴电子

丝印：5J；Package：SOT323；80 V, 100 mA PNP resistor-equipped transistors

Features and benefits • 100 mA output current capability • High breakdown voltage • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • AEC-Q101 qualified

文件：295.86 Kbytes 页数：16 Pages

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丝印：5J；Package：SOT323；80 V, 100 mA PNP resistor-equipped transistors

1. General description PNP Resistor-Equipped Transistor (RET) family in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number R1 R2 Package kΩ kΩ Nexperia JEITA NPN complement: NHDTA114EU 10 10 NHDTC114EU NHDTA124EU 22 22 NHDTC124EU

文件：295.87 Kbytes 页数：16 Pages

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