丝印：5K0；Package：DFN4D；TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic

Features Ultra small package DFN4D (1.0 mm x 1.0 mm; t 0.37 mm (typ.)). Low quiescent current (IB(ON) = 1.2 μA (typ.) at IOUT = 0 mA) High Ripple rejection ratio (74 dB (typ.) at 100 Hz, 0.8 V-output) Fast load transient response (-70/+35 mV at 2.8 V-output, IOUT = 1 mA ⇔ 100 mA) Low Dropout

文件：959.88 Kbytes 页数：20 Pages

TOSHIBA

东芝

Power Chip짰 Thick Film on Alumina Substrate

文件：239.96 Kbytes 页数：2 Pages

OHMITE