丝印：5KK3L；Package：SO-8；Dual P-channel -30 V, 48 mΩ typ., -5 A, STripFET™ H6 Power MOSFET in an SO-8 package

Features  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The

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STMICROELECTRONICS

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