丝印：5KK3L；Package：SO-8；Dual P-channel -30 V, 48 mΩ typ., -5 A, STripFET™ H6 Power MOSFET in an SO-8 package

Features  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The

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STMICROELECTRONICS

意法半导体

Dual P-Channel -30 V, 0.048 Ohm typ., -5 A STripFET H6 Power MOSFET in a SO-8 package

This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.\n • Very low on-resistance\n• Very low gate charge• High avalanche ruggedness\n• Low gate drive power loss;

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意法半导体

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SOP8

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SOP8

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上传：深圳市众芯源半导体有限公司

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SOP8

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上传：深圳市励创源科技有限公司