丝印：5962-9087001M3A；Package：LCCC；OCTAL REGISTERED TRANSCEIVERS WITH 3-STATE OUTPUTS

State-of-the-Art BiCMOS Design Significantly Reduces ICCZ 3-State True Outputs Back-to-Back Registers for Storage ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015 Package Options Include Plastic Small-Outline Packages (DW), Ceramic Chip Carriers (FK) and Flatpacks (W), and Plas

文件：301.54 Kbytes 页数：12 Pages

TI

德州仪器

丝印：5962-9087001M3A；Package：LCCC；OCTAL REGISTERED TRANSCEIVERS WITH 3-STATE OUTPUTS

State-of-the-Art BiCMOS Design Significantly Reduces ICCZ 3-State True Outputs Back-to-Back Registers for Storage ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015 Package Options Include Plastic Small-Outline Packages (DW), Ceramic Chip Carriers (FK) and Flatpacks (W), and Plas

文件：301.54 Kbytes 页数：12 Pages

TI

德州仪器

丝印：5962-9087001M3A；Package：LCCC；OCTAL REGISTERED TRANSCEIVERS WITH 3-STATE OUTPUTS

State-of-the-Art BiCMOS Design Significantly Reduces ICCZ 3-State True Outputs Back-to-Back Registers for Storage ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015 Package Options Include Plastic Small-Outline Packages (DW), Ceramic Chip Carriers (FK) and Flatpacks (W), and Plas

文件：301.54 Kbytes 页数：12 Pages

TI

德州仪器

丝印：5962-9087001M3A；Package：LCCC；OCTAL REGISTERED TRANSCEIVERS WITH 3-STATE OUTPUTS

State-of-the-Art BiCMOS Design Significantly Reduces ICCZ 3-State True Outputs Back-to-Back Registers for Storage ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015 Package Options Include Plastic Small-Outline Packages (DW), Ceramic Chip Carriers (FK) and Flatpacks (W), and Plas

文件：301.54 Kbytes 页数：12 Pages

TI

德州仪器

OCTAL REGISTERED TRANSCEIVERS WITH 3-STATE OUTPUTS

文件：303.51 Kbytes 页数：13 Pages

TI

德州仪器

OCTAL REGISTERED TRANSCEIVERS WITH 3-STATE OUTPUTS

文件：447.1 Kbytes 页数：16 Pages

TI

德州仪器