丝印：5962-9094001MRA；Package：CDIP；OCTAL BUS TRANSCEIVERS WITH 3-STATE OUTPUTS

State-of-the-Art BiCMOS Design Significantly Reduces ICCZ ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015 Package Options Include Plastic Small-Outline (DW) Packages, Ceramic Chip Carriers (FK) and Flatpacks (W), and Plastic and Ceramic 300-mil DIPs (J, N) description The ′B

文件：217.46 Kbytes 页数：8 Pages

TI

德州仪器

丝印：5962-9094001MRA；Package：CDIP；OCTAL BUS TRANSCEIVERS WITH 3-STATE OUTPUTS

State-of-the-Art BiCMOS Design Significantly Reduces ICCZ ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015 Package Options Include Plastic Small-Outline (DW) Packages, Ceramic Chip Carriers (FK) and Flatpacks (W), and Plastic and Ceramic 300-mil DIPs (J, N) description The ′B

文件：217.46 Kbytes 页数：8 Pages

TI

德州仪器

丝印：5962-9094001MRA；Package：CDIP；OCTAL BUS TRANSCEIVERS WITH 3-STATE OUTPUTS

State-of-the-Art BiCMOS Design Significantly Reduces ICCZ ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015 Package Options Include Plastic Small-Outline (DW) Packages, Ceramic Chip Carriers (FK) and Flatpacks (W), and Plastic and Ceramic 300-mil DIPs (J, N) description The ′B

文件：217.46 Kbytes 页数：8 Pages

TI

德州仪器

丝印：5962-9094001MRA；Package：CDIP；OCTAL BUS TRANSCEIVERS WITH 3-STATE OUTPUTS

State-of-the-Art BiCMOS Design Significantly Reduces ICCZ ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015 Package Options Include Plastic Small-Outline (DW) Packages, Ceramic Chip Carriers (FK) and Flatpacks (W), and Plastic and Ceramic 300-mil DIPs (J, N) description The ′B

文件：217.46 Kbytes 页数：8 Pages

TI

德州仪器

OCTAL BUS TRANSCEIVERS WITH 3-STATE OUTPUTS

文件：97.08 Kbytes 页数：7 Pages

TI

德州仪器