丝印：560；WE-LQS SMT Semi-Shielded Power Inductor

General Information: Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：658.62 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：560；WE-TI Radial Leaded Wire Wound Inductor

General Properties: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (refering to IR) -40 up to +85 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：663.22 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：560；WE-LHCA SMT High Current Inductor

General Information: Ambient Temperature (referring to IRP) -55 °C up to +115 °C Operating Temperature -55 °C up to +155 °C Storage Conditions (in original packaging)

文件：824.25 Kbytes 页数：8 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：560；WE-LHCA SMT High Current Inductor

General Information: Ambient Temperature (referring to IRP) -55 °C up to +115 °C Operating Temperature -55 °C up to +155 °C Storage Conditions (in original packaging)

文件：804.83 Kbytes 页数：8 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：560；Package：SOT23；500V PNP HIGH VOLTAGE TRANSISTOR IN SOT23

Features BVCEO > -500V IC = -150mA high Continuous Collector Current ICM Up to -500mA Peak Pulse Current Excellent hFE Characteristics up to IC = -100mA Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The FMMT560Q is suitable for aut

文件：569.75 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：560；Package：SOT23；500V PNP HIGH VOLTAGE TRANSISTOR IN SOT23

Features BVCEO > -500V IC = -150mA high Continuous Collector Current ICM Up to -500mA Peak Pulse Current Excellent hFE Characteristics up to IC = -100mA Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The FMMT560Q is suitable for aut

文件：569.75 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：560；Package：SSOT-3L；PN Low-Saturation Transistor

Features • These devices are designed with high-current gain and low-saturation voltage with collector currents up to 2 A continuous.

文件：506.55 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

丝印：560；This specification applies to SMD Shielded Power Choke

文件：635.21 Kbytes 页数：7 Pages

LEIDITECH

雷卯电子

丝印：560；This specification applies to SMD Shielded Power Choke

文件：654.24 Kbytes 页数：10 Pages

LEIDITECH

雷卯电子

丝印：560；This specification applies to SMD Shielded Power Choke

文件：654.24 Kbytes 页数：10 Pages

LEIDITECH

雷卯电子