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B503-P

BLOCKTYPEAUTOMOTIVEPECTIFIER

MICMIC GROUP RECTIFIERS

昌福电子昌福电子有限公司

BA503

BA/BCSeries:1.5-6.0WattsSingleandDualOutputs

FEATURES •InputπFilter •FullyRegulatedOutputs •IndustryStandardPinouts •5,12,24,28,and48VDCInputs •RippleandNoiseLessThan50mVpp •Input/OutputIsolation

ETCList of Unclassifed Manufacturers

未分类制造商

BB503

BuildinBiasingCircuitMOSFETICUHF/VHFRFAmplifier

Features •BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoise;NF=1.8dBtyp.atf=900MHz •Highgain;PG=22dBtyp.atf=900MHz •WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Providemini

HitachiHitachi Semiconductor

日立日立公司

BB503

BuildinBiasingCircuitMOSFETICUHF/VHFRFAmplifier

Features •BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoise;NF=1.8dBtyp.atf=900MHz •Highgain;PG=22dBtyp.atf=900MHz •WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Providemini

HitachiHitachi Semiconductor

日立日立公司

BB503C

BuildinBiasingCircuitMOSFETICUHF/VHFRFAmplifier

Features •BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoise;NF=1.8dBtyp.atf=900MHz •Highgain;PG=22dBtyp.atf=900MHz •WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Providemini

HitachiHitachi Semiconductor

日立日立公司

BB503C

BuiltinBiasingCircuitMOSFETICUHFRFAmplifier

Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoise;NF=1.8dBtyp.atf=900MHz •Highgain;PG=22dBtyp.atf=900MHz •WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Providemini

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

BB503CCS-TL-E

BuiltinBiasingCircuitMOSFETICUHFRFAmplifier

Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoise;NF=1.8dBtyp.atf=900MHz •Highgain;PG=22dBtyp.atf=900MHz •WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Providemini

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

BB503M

BuiltinBiasingCircuitMOSFETICUHFRFAmplifier

Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoise;NF=1.8dBtyp.atf=900MHz •Highgain;PG=22dBtyp.atf=900MHz •WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Providemini

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

BB503M

BuildinBiasingCircuitMOSFETICUHF/VHFRFAmplifier

Features •BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoise;NF=1.8dBtyp.atf=900MHz •Highgain;PG=22dBtyp.atf=900MHz •WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Providemini

HitachiHitachi Semiconductor

日立日立公司

BB503MCS-TL-E

BuiltinBiasingCircuitMOSFETICUHFRFAmplifier

Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoise;NF=1.8dBtyp.atf=900MHz •Highgain;PG=22dBtyp.atf=900MHz •WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Providemini

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

产品属性

  • 产品编号:

    503MBB-ABAF

  • 制造商:

    Silicon Labs

  • 类别:

    晶体,振荡器,谐振器 > 可编程振荡器

  • 系列:

    CMEMS® Si503

  • 包装:

    托盘

  • 基本谐振器:

    MEMS

  • 类型:

    CMEMS®

  • 可编程类型:

    由 Digi-Key 编程(请在网站订购单中输入您需要的频率)

  • 功能:

    启用/禁用

  • 输出:

    LVCMOS

  • 电压 - 供电:

    1.7V ~ 3.6V

  • 频率稳定性(总体):

    ±30ppm

  • 工作温度:

    -20°C ~ 70°C

  • 电流 - 供电(最大值):

    8.9mA

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    4-SMD,无引线

  • 大小 / 尺寸:

    0.157" 长 x 0.126" 宽(4.00mm x 3

  • 描述:

    MEMS OSC PROG CMEMS LVCMOS 1.7V

供应商型号品牌批号封装库存备注价格
ICS
23+
SOP10
6500
专注配单,只做原装进口现货
询价
ICS
23+
SOP10
6500
专注配单,只做原装进口现货
询价
CANON
23+
MLP
4856
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
CANON
2447
QFN
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
IR
23+
模块
3562
询价
IR
21+
模块
12588
原装正品,一级品牌代理
询价
IR
22+
MODULE
6000
终端可免费供样,支持BOM配单
询价
IR
23+
MODULE
7000
询价
IR
2023+
MODULE
42
主打螺丝模块系列
询价
IR
04+
6000
绝对原装自己现货
询价
更多503MBB-ABAF供应商 更新时间2025-6-11 15:01:00