Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise; NF = 1.8 dB typ. at f = 900 MHz • High gain; PG = 22 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini

文件：64.739 Kbytes 页数：13 Pages

HITACHIHitachi Semiconductor

日立日立公司

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise; NF = 1.8 dB typ. at f = 900 MHz • High gain; PG = 22 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini

文件：64.66 Kbytes 页数：13 Pages

HITACHIHitachi Semiconductor

日立日立公司

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

HITACHI

日立

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise; NF = 1.8 dB typ. at f = 900 MHz • High gain; PG = 22 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini

文件：64.66 Kbytes 页数：13 Pages

HITACHIHitachi Semiconductor

日立日立公司

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise; NF = 1.8 dB typ. at f = 900 MHz • High gain; PG = 22 dB typ. at f = 900 MHz • Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini

文件：217.98 Kbytes 页数：11 Pages

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Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise; NF = 1.8 dB typ. at f = 900 MHz • High gain; PG = 22 dB typ. at f = 900 MHz • Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini

文件：217.98 Kbytes 页数：11 Pages

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瑞萨

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise; NF = 1.8 dB typ. at f = 900 MHz • High gain; PG = 22 dB typ. at f = 900 MHz • Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini

文件：300.97 Kbytes 页数：11 Pages

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瑞萨

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise; NF = 1.8 dB typ. at f = 900 MHz • High gain; PG = 22 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini

文件：64.739 Kbytes 页数：13 Pages

HITACHIHitachi Semiconductor

日立日立公司

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise; NF = 1.8 dB typ. at f = 900 MHz • High gain; PG = 22 dB typ. at f = 900 MHz • Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini

文件：300.97 Kbytes 页数：11 Pages

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Transistors>Amplifiers/MOSFETs

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