丝印：4G65；Package：SMBFlat；650 V, 4 A high surge silicon carbide power Schottky diode

Features • None or negligible reverse recovery charge in application current range • Switching behaviour independent of temperature • High forward surge capability • Operating Tj from -55 °C to +175 °C • ECOPACK2 compliant component

文件：495.02 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

丝印：4G65Y；Package：SMBFlat；Automotive 650 V, 4 A high surge silicon carbide power Schottky diode

Features • AEC-Q101 qualified and PPAP capable • None or negligible reverse recovery charge in application current range • Switching behaviour independent of temperature • High forward surge capability • Operating Tj from -55 °C to +175 °C • ECOPACK2 compliant component

文件：497.82 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体