丝印：4816B；Package：SOP-8；Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

GENERAL FEATURES ● Q1:N-Channel ● 30V/7A, RDS(ON) = 19m2 (typ.) @ VGs = 10V RDS(ON) = 24m2 (typ.) @ VGS = 4.5V Q2:N-Channel ● 30V/11.2A, RDS(ON) = 10m2 (typ.) @ VGs=10V GS RDS ON = 14m2 (typ.) @ V=4.5V DS'ON ● Schottky Vds=30V IF =2.0A Vsd: 0.5V@1.0A

文件：4.11502 Mbytes 页数：11 Pages

TECHPUBLIC

台舟电子

丝印：4816；Package：SO-8；Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

FEATURES • LITTLE FOOTr Plus Power MOSFET • 100 Rg Tested

文件：91.82 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

丝印：4816B；Package：SOP-8；Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

GENERAL FEATURES ● Q1:N-Channel ● 30V/7A, RDS(ON) = 19m2 (typ.) @ VGs = 10V RDS(ON)=24m2 (typ.) @ VGs = 4.5V ● Q2:N-Channel ● 30V/11.2A, RDS(ON) = 10m2 (typ.) @ VGS =10V RDS(ON) = 14m2 (typ.) @ VGS =4.5V ● Schottky Vds=30V IF =2.0A Vsd: 0.5V@1.0A

文件：4.118569 Mbytes 页数：11 Pages

TECHPUBLIC

台舟电子

丝印：4810；Package：VSSOP；TPS4810-Q1 100V Automotive Low IQ, Back-to-Back MOSFET Smart High Side Driver With Short-Circuit Protection and Diagnostics

1 Features • AEC-Q100 automotive qualified for automotive applications – Device temperature grade 1: –40°C to +125°C ambient operating temperature range • Functional Safety-Capable – Documentation available to aid functional safety system design • 3.5V to 95V input range (100V absolute max

文件：1.49136 Mbytes 页数：36 Pages

TI

德州仪器

丝印：4813；Package：VSSOP；TPS4813-Q1 100V Low IQ Automotive High-Side Driver With Low-Power Mode and Adjustable Load Wakeup Trigger

1 Features • AEC-Q100 automotive qualified for grade 1 temperature – Device temperature grade 1: –40°C to +125°C ambient operating temperature range • Functional Safety-Capable – Documentation available to aid functional safety system design • 3.5V to 95V input range (100V absolute maximum

文件：1.65019 Mbytes 页数：47 Pages

TI

德州仪器

丝印：4816B；Package：SOP-8；Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

GENERAL FEATURES ● Q1:N-Channel ● 30V/7A, RDS(ON) 19m2 (typ.) @ VGS = 10V RDS(ON) = 24m2 (typ.) @ VGs = 4.5V ● Q2:N-Channel ● 30V/11.2A, RDS(ON) = 10m2 (typ.) @ VGS =10V RDS ON = 14m2 (typ.) @ VGs=4.5V ● Schottky Vds=30V IF =2.0A Vsd: 0.5V@1.0A

文件：4.1295 Mbytes 页数：11 Pages

TECHPUBLIC

台舟电子

丝印：4818；Package：SO-8；Dual N-Channel 40-V (D-S) MOSFET

文件：327.61 Kbytes 页数：3 Pages

LRC

乐山无线电

丝印：4816B；Package：SO-8；Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

文件：88.01 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司

丝印：4816B；Package：SO-8；Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

文件：264.91 Kbytes 页数：13 Pages

VishayVishay Siliconix

威世威世科技公司

电感器(线圈)

Murata

村田