丝印：4816B；Package：SOP-8；Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

GENERAL FEATURES ● Q1:N-Channel ● 30V/7A, RDS(ON) = 19m2 (typ.) @ VGs = 10V RDS(ON) = 24m2 (typ.) @ VGS = 4.5V Q2:N-Channel ● 30V/11.2A, RDS(ON) = 10m2 (typ.) @ VGs=10V GS RDS ON = 14m2 (typ.) @ V=4.5V DS'ON ● Schottky Vds=30V IF =2.0A Vsd: 0.5V@1.0A

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丝印：4816B；Package：SOP-8；Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

GENERAL FEATURES ● Q1:N-Channel ● 30V/7A, RDS(ON) = 19m2 (typ.) @ VGs = 10V RDS(ON)=24m2 (typ.) @ VGs = 4.5V ● Q2:N-Channel ● 30V/11.2A, RDS(ON) = 10m2 (typ.) @ VGS =10V RDS(ON) = 14m2 (typ.) @ VGS =4.5V ● Schottky Vds=30V IF =2.0A Vsd: 0.5V@1.0A

文件：4.118569 Mbytes 页数：11 Pages

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丝印：4816B；Package：SOP-8；Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

GENERAL FEATURES ● Q1:N-Channel ● 30V/7A, RDS(ON) 19m2 (typ.) @ VGS = 10V RDS(ON) = 24m2 (typ.) @ VGs = 4.5V ● Q2:N-Channel ● 30V/11.2A, RDS(ON) = 10m2 (typ.) @ VGS =10V RDS ON = 14m2 (typ.) @ VGs=4.5V ● Schottky Vds=30V IF =2.0A Vsd: 0.5V@1.0A

文件：4.1295 Mbytes 页数：11 Pages

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丝印：4816B；Package：SO-8；Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

文件：88.01 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司

丝印：4816B；Package：SO-8；Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

文件：264.91 Kbytes 页数：13 Pages

VishayVishay Siliconix

威世威世科技公司