SPDT NON-REFLECTIVE SWITCH, DC - 4 GHz

文件：165.33 Kbytes 页数：4 Pages

HITTITE

Dual N-Channel 60 V (D-S) MOSFET

文件：945.27 Kbytes 页数：6 Pages

VBSEMI

微碧半导体

丝印：43563；Package：12-Lead；Surge Stopper with Fault Latchoff

DESCRIPTION The LT®4356-3 surge stopper protects loads from high voltage transients. It regulates the output during an overvoltage event, such as load dump in automobiles, by controlling the gate of an external N-channel MOSFET. FEATURES ■ Stops High Voltage Surges ■ Adjustable Output Clamp Vo

文件：631.76 Kbytes 页数：24 Pages

AD

亚德诺

丝印：43563；Package：12-Lead；Surge Stopper with Fault Latchoff

DESCRIPTION The LT®4356-3 surge stopper protects loads from high voltage transients. It regulates the output during an overvoltage event, such as load dump in automobiles, by controlling the gate of an external N-channel MOSFET. FEATURES ■ Stops High Voltage Surges ■ Adjustable Output Clamp Vo

文件：631.76 Kbytes 页数：24 Pages

AD

亚德诺

丝印：43563；Package：12-Lead；Surge Stopper with Fault Latchoff

DESCRIPTION The LT®4356-3 surge stopper protects loads from high voltage transients. It regulates the output during an overvoltage event, such as load dump in automobiles, by controlling the gate of an external N-channel MOSFET. FEATURES ■ Stops High Voltage Surges ■ Adjustable Output Clamp Vo

文件：631.76 Kbytes 页数：24 Pages

AD

亚德诺

丝印：4350SPN；Package：SO8；50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：730.36 Kbytes 页数：19 Pages

NEXPERIA

安世

丝印：4350SS；Package：SO8；50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：696.38 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：435E；Package：DFN3333-8L；30V P-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@-10V, ID@-10A

文件：459.54 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：435E；Package：DFN3333-8L；30V P-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@-10V, ID@-10A

文件：393.52 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：4350X；Package：SOT-89；NPN Transistor

文件：2.29487 Mbytes 页数：4 Pages

PJSEMI

平晶半导体