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US201

POWERSWITCHESWITHFLAG

DESCRIPTION TheUTCUS201/Aseriesare80mΩ,500mAforUS201(1.1AforUS201A)high-sidepowerswitches.There’sinternalsinglelowvoltageN-ChannelMOSFETwhichmakesitanidealforallUSBapplications.ThisMOSFETshouldbedrivenbyachargepumpcircuitryinside.Itsswitchonresistance

UTCUnisonic Technologies

友顺友顺科技股份有限公司

US201

HIGH-SIDEPOWERSWITCHESWITHFLAG

UTCUnisonic Technologies

友顺友顺科技股份有限公司

US201-A-B-C

HIGH-SIDEPOWERSWITCHESWITHFLAG

DESCRIPTION TheUTCUS201/A/B/Cseriesare80mΩhigh-sidepowerswitches.There’sinternalsinglelowvoltageN-ChannelMOSFETwhichmakesitanidealforallUSBapplications.ThisMOSFETshouldbedrivenbyachargepumpcircuitryinside.Itsswitchonresistanceisaslowas80mΩwhichweknow

UTCUnisonic Technologies

友顺友顺科技股份有限公司

US201C

HIGH-SIDEPOWERSWITCHESWITHFLAG

UTCUnisonic Technologies

友顺友顺科技股份有限公司

VCS201

BulkMetal®FoilTechnologyConformallyCoatedPrecisionCurrentSensingResistorswithTCRof5ppm/°Candvaluesdownto5mΩ

VishayVishay Siliconix

威世科技威世科技半导体

VC-TCXO-201CA

TCXO,VC-TCXO

■Features ●VC-TCXOforPersonalCellularPhone. ●Becauseitisleadlesstype,automaticmountingispossible. ●LowProfile,Height2.4mm. ●ReflowSoldering.

KSSKyocera Kinseki Corpotation

京瓷京瓷株式会社

VDD201LCTA

Lowvoltage,Lowpower,짹1HighdetectaccuracyCMOSVoltageDetectorwithDelaycircuit

GENERALDESCRIPTIONS TheVDDseriesaredelaycircuitbuilt-involtagedetectorswithlow voltage,lowpowerconsumptionandhighaccuracy.Theaccuracyofthe detectionvoltageisdetectedbasedonavoltagereferenceofhigh accuracythatthetemperaturecoefficientiscontrolled.Thedetect

ANASEMAnaSem Hong Kong Limited.

安纳森半导体安纳森半导体香港有限公司

VDD201LNTA

Lowvoltage,Lowpower,짹1HighdetectaccuracyCMOSVoltageDetectorwithDelaycircuit

GENERALDESCRIPTIONS TheVDDseriesaredelaycircuitbuilt-involtagedetectorswithlow voltage,lowpowerconsumptionandhighaccuracy.Theaccuracyofthe detectionvoltageisdetectedbasedonavoltagereferenceofhigh accuracythatthetemperaturecoefficientiscontrolled.Thedetect

ANASEMAnaSem Hong Kong Limited.

安纳森半导体安纳森半导体香港有限公司

VDD201MCTA

Lowvoltage,Lowpower,짹1HighdetectaccuracyCMOSVoltageDetectorwithDelaycircuit

GENERALDESCRIPTIONS TheVDDseriesaredelaycircuitbuilt-involtagedetectorswithlow voltage,lowpowerconsumptionandhighaccuracy.Theaccuracyofthe detectionvoltageisdetectedbasedonavoltagereferenceofhigh accuracythatthetemperaturecoefficientiscontrolled.Thedetect

ANASEMAnaSem Hong Kong Limited.

安纳森半导体安纳森半导体香港有限公司

VDD201MNTA

Lowvoltage,Lowpower,짹1HighdetectaccuracyCMOSVoltageDetectorwithDelaycircuit

GENERALDESCRIPTIONS TheVDDseriesaredelaycircuitbuilt-involtagedetectorswithlow voltage,lowpowerconsumptionandhighaccuracy.Theaccuracyofthe detectionvoltageisdetectedbasedonavoltagereferenceofhigh accuracythatthetemperaturecoefficientiscontrolled.Thedetect

ANASEMAnaSem Hong Kong Limited.

安纳森半导体安纳森半导体香港有限公司

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