| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=85A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7.0mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOD412usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgateresistance.ThisdeviceisideallysuitedforuseasahighsideswitchinCPUcorepowerconversion.StandardProductAOD412isPb-free(meetsROHS&Sony259specificatio | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
N-ChannelSDMOSTMPowerTransistor GeneralDescription TheAOT412andAOT412LisfabricatedwithSDMOSTMtrenchtechnologythatcombinesexcellentRDS(ON)withlowgatecharge.Theresultisoutstandingefficiencywithcontrolledswitchingbehavior.ThisuniversaltechnologyiswellsuitedforPWM,loadswitchingandgeneralpurpos | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
iscN-ChannelMOSFETTransistor •DESCRITION •Besuitableforsynchronousrectificationforserverand generalpurposeapplications •FEATURES •DrainCurrent–ID=60A@TC=25℃ •DrainSourceVoltage- :VDSS=100V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=15.8mΩ(Max) •100avalanchetested •Minimu | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelSDMOSTMPowerTransistor GeneralDescription TheAOT412andAOT412LisfabricatedwithSDMOSTMtrenchtechnologythatcombinesexcellentRDS(ON)withlowgatecharge.Theresultisoutstandingefficiencywithcontrolledswitchingbehavior.ThisuniversaltechnologyiswellsuitedforPWM,loadswitchingandgeneralpurpos | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOU412usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgateresistance.ThisdeviceisideallysuitedforuseasahighsideswitchinCPUcorepowerconversion.StandardProductAOU412isPb-free(meetsROHS&Sony259specificatio | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=85A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOU412usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgateresistance.ThisdeviceisideallysuitedforuseasahighsideswitchinCPUcorepowerconversion.StandardProductAOU412isPb-free(meetsROHS&Sony259specificatio | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
100VN-ChannelMOSFET | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret | PanasonicPanasonic Corporation 松下松下电器 | Panasonic | ||
NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret | PanasonicPanasonic Corporation 松下松下电器 | Panasonic | ||
NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret | PanasonicPanasonic Corporation 松下松下电器 | Panasonic | ||
NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret | PanasonicPanasonic Corporation 松下松下电器 | Panasonic | ||
2.6mm&3.5mmAUDIOJACKSSTEREO&MONOEARPHONEJACKS | ADAM-TECHAdam Technologies, Inc. 亚当科技亚当科技股份有限公司 | ADAM-TECH | ||
TechsilConductiveElastomer | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
TechsilConductiveElastomer | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
TechsilConductiveElastomer | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
TechsilConductiveElastomer | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
TechsilConductiveElastomer | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
TechsilConductiveElastomer | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
H11A |
2048+ |
SOT223 |
9851 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
H11A |
2021+ |
SOT223 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | ||
3M |
新 |
12 |
全新原装 货期两周 |
询价 | |||
3M |
2022+ |
8 |
全新原装 货期两周 |
询价 | |||
NA |
23+ |
SOJ |
6000 |
只有原装正品,老板发话合适就出 |
询价 | ||
NA |
24+ |
SOJ |
990000 |
明嘉莱只做原装正品现货 |
询价 | ||
TI/德州仪器 |
23+ |
QFN |
6500 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
MULTICOMP |
2308+ |
295565 |
一级代理,原装正品,公司现货! |
询价 | |||
COXOC |
22+ |
23509 |
郑重承诺只做原装进口货 |
询价 | |||
原装 |
专业铁帽 |
CAN9 |
67500 |
铁帽原装主营-可开原型号增税票 |
询价 |
