B - Indoor keyed

文件：70.16 Kbytes 页数：4 Pages

LEMO

雷莫

K - Outdoor keyed

文件：141.37 Kbytes 页数：5 Pages

LEMO

雷莫

K - Outdoor keyed

文件：85.89 Kbytes 页数：4 Pages

LEMO

雷莫

K - Outdoor keyed

文件：132.83 Kbytes 页数：4 Pages

LEMO

雷莫

K - Outdoor keyed

文件：134.29 Kbytes 页数：4 Pages

LEMO

雷莫

B - Indoor keyed

文件：67.39 Kbytes 页数：4 Pages

LEMO

雷莫

丝印：402XY；Package：SOT23-3L；Transient Voltage Suppressing Device For ESD/Transient Protection

Features
ESD Protect for 2 Lines with Unidirectional
ESD Protect for 1 Line with Bidirectional
Provide ESD protection for a line to IEC 61000-4-2 (ESD) ±26kV (air) IEC 61000-4-2 (ESD) ±20kV (contact) IEC 61000-4-4 (EFT) 60A (5/50ns)
Suitable for, 12V and below, operating voltage ap

文件：212.32 Kbytes 页数：8 Pages

AMAZING

晶焱科技

丝印：4021SN；Package：SO8；20 V, 7.5 A NPN/NPN low VCEsat (BISS) transistor

Features and benefits * Very low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional tr

文件：854.4 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：4021SP；Package：SO8；20 V, 6.3 A PNP/PNP low VCEsat (BISS) transistor

General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Features and benefits ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ High col

文件：1.08979 Mbytes 页数：15 Pages

NEXPERIA

安世

丝印：4021SPN；Package：SO8；20 V NPN/PNP low VCEsat (BISS) transistor

Features and benefits * Very low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional tr

文件：874.03 Kbytes 页数：20 Pages

NEXPERIA

安世