PBSS4021SP中文资料安世数据手册PDF规格书

General description

PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.

Features and benefits

■ Low collector-emitter saturation voltage VCEsat

■ High collector current capability IC and ICM

■ High collector current gain (hFE) at high IC

■ High efficiency due to less heat generation

■ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

Applications

■ Loadswitch

■ Battery-driven devices

■ Power management

■ Charging circuits

■ Power switches (e.g. motors, fans)