丝印：3400；Package：SOT-23；30V N-CHANNEL Enhancement Mode MOSFET

Features • VDS=30V RDS(ON)=33mΩ @VGS=4.5V, ID=5A RDS(ON)=52mΩ @VGS=2.5V, ID=4A • Low on-resistance • Low gate charge • Excellent thermal and electrical capabilities • Compact and low profile SOT-23 package

文件：657.42 Kbytes 页数：7 Pages

CYSTEKEC

全宇昕科技

丝印：3400；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

文件：782.45 Kbytes 页数：7 Pages

ADV

爱德微

丝印：3400；Package：SOT-23；N-Channel MOSFET uses advanced trench technology

文件：857.51 Kbytes 页数：3 Pages

DOINGTER

杜因特

丝印：3400；Package：SOT-23-3；N-Channel MOSFET uses advanced trench technology

文件：877.73 Kbytes 页数：3 Pages

DOINGTER

杜因特

丝印：3400；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

文件：861.3 Kbytes 页数：6 Pages

FUTUREWAFER

丝印：3400；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

文件：1.28239 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：3400；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

文件：163.04 Kbytes 页数：7 Pages

RECTRON

丽正

丝印：3400；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

文件：580.21 Kbytes 页数：6 Pages

YANGJIE

扬杰电子

包装：散装 类别：原型开发，制造品 有孔原型板 描述：BREADBRD PREPUNCHED INSULAT NPTH

Keystone Electronics

丝印：3400L；Package：SOT-23-3L；PWM applications

Description The 3400L uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Application PWM applications Load switch Power

文件：1.62324 Mbytes 页数：6 Pages

GOFORD

谷峰半导体