RM3400

Marking：3400；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

RM3400A

Marking：3400A；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

GeneralFeatures VDS=30V,ID=5.8A RDS(ON)

RM3400C

Marking：R0；Package：SOT-23；N-Channel Enhancement Mode Mosfet

Features HighdensecelldesignforextremelylowRDS(on). Exceptionalon-resistanceandmaximumDCcurrentcapability. Load/PowerSwitching. InterfacingSwitching

RSM3400

N-Channel30-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverter

RX3400

LowPowerASKReceiverIC

SA3400

SA3600&SA3400Series

mainfunction • Excellentperformance Efficientlyhandledata-intensiveapplicationswithsequentialread/writethroughputofover6,200/3,000MB/s • Petabyte-scaleflexibility Drivebayscanbeexpandedupto96byattachingupto7SynologyRX1222sasexpansionunits. • Flexiblenetworkin

SCH3400

Largesupercapacitorcells

+Capacitance3200F +Extremepowerdensity +Durableandsafealuminumcasings +Weldableterminals* +Highcyclelife>1,000,000cycles +Hightemperaturetolerance(operatingandstorage) +Germanquality +RoHScompliant +ULcertified

SCI3400

Largesupercapacitorcells

+Capacitance3200F +Extremepowerdensity +Durableandsafealuminumcasings +Weldableterminals* +Highcyclelife>1,000,000cycles +Hightemperaturetolerance(operatingandstorage) +Germanquality +RoHScompliant +ULcertified

SD3400

N-Channel30-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverter

SFH3400

NPN-Silizium-FototransistorSiliconNPNPhototransistor

Features ●Especiallysuitableforapplicationsfrom460nmto1080nm ●Highlinearity ●SMTpackagewithoutbaseconnection, suitableforvaporphaseandIRreflow soldering(JEDEClevel4) ●Availableonlyontapeandreel Applications ●Ambientlightdetector