丝印：3400A；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

General Features VDS = 30V,ID = 5.8A RDS(ON)

文件：876.19 Kbytes 页数：7 Pages

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MOSFET

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N-Channel Enhancement Mode Mosfet

Features High dense cell design for extremely low RDS(on). Exceptional on-resistance and maximum DC current capability. Load/Power Switching. Interfacing Switching

文件：400.34 Kbytes 页数：5 Pages

RECTRON

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N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：486.58 Kbytes 页数：9 Pages

VBSEMI

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Low Power ASK Receiver IC

文件：87.06 Kbytes 页数：7 Pages

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