BZX84-B56

Marking：R0；Package：SOT23；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX84-A),±2(BZX84-B)and approximately±5(BZX84-C)tolerancerange.Theseriesincludes37breakdownvolt

BZX84-B56-Q

Marking：R0；Package：TO-236AB；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX84-A),±2(BZX84-B)and approximately±5(BZX84-C)tolerancerange.Theseriesincludes37breakdownvolt

DMN32D0LFB4-7B

Marking：R0；Package：X2-DFN1006-3；N-CHANNEL ENHANCEMENT MODE MOSFET

Features N-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(

ISL9016IRUNWZ-T

Marking：R0；Package：6LdμTDFN；150mA Dual LDO with Low Noise, High PSRR, and Low IQ

150mADualLDOwithLowNoise,HighPSRR,andLowIQ ISL9016isahighperformancedualLDOcapableofprovidingupto150mAcurrentoneachchannel.ItfeaturesalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto4.7µFwithanESRofupto200mΩ. Features •

RM3400C

Marking：R0；Package：SOT-23；N-Channel Enhancement Mode Mosfet

Features HighdensecelldesignforextremelylowRDS(on). Exceptionalon-resistanceandmaximumDCcurrentcapability. Load/PowerSwitching. InterfacingSwitching

UN300N23T

Marking：R0；Package：SOT-23；N-Channel Enhancement Mode MOSFET

Feature AdvancedTrenchProcessTechnology LowThresholdVoltage FastSwitchingSpeed Halogen-Free&Lead-Free Applications LoadSwitchforPortableDevices Voltagecontrolledsmallsignalswitch

FP6802-37CS3G

Marking：R0；Package：SOT-23-3；High-Precision Voltage Detector with Ultra-Low Quiescent Current

FTK3400

Marking：R0；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

PJM3400NSA

Marking：R0；Package：SOT-23；N- Enhancement Mode Field Effect Transistor

7443000910070

Marking：R07；WE-HCMD SMT High Current Flat Wire Inductor

GeneralInformation: AmbientTemperature(referring toIRP)-40°Cupto+85°C OperatingTemperature-40°Cupto+125°C StorageConditions(inoriginal packaging)