丝印：R0；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

文件：283.48 Kbytes 页数：4 Pages

FS

MOS FET:Low Voltage

First Silicon

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The G3400 uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device. The G3400 is universally used for all commercial-industrial applications. Features * Lower Gate Charge * Small Package Outline * RoHS Compliant

文件：278.05 Kbytes 页数：4 Pages

GTM

勤益投资控股

N - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

文件：293.01 Kbytes 页数：4 Pages

ETL

亚历电子

Plastic-Encapsulate MOSFET

文件：1.99127 Mbytes 页数：5 Pages

HDSEMI

海德半导体