BZA868AVL

Marking：R1；Package：SOT353；Quadruple low capacitance ESD suppressor

FEATURES •Lowdiodecapacitance •Lowleakagecurrent •SOT353(SC-88A)surfacemountpackage •Commonanodeconfiguration. APPLICATIONS •Communicationsystems •Computersandperipherals •Audioandvideoequipment. DESCRIPTION Monolithictransientvoltagesuppressordiodeinafi

BZA868AVL

Marking：R1；Package：SOT353；Quadruple low capacitance ESD suppressor

FEATURES •Lowdiodecapacitance •Lowleakagecurrent •SOT353(SC-88A)surfacemountpackage •Commonanodeconfiguration. APPLICATIONS •Communicationsystems •Computersandperipherals •Audioandvideoequipment. DESCRIPTION Monolithictransientvoltagesuppressordiodeinafivel

BZX84-B5V1

Marking：R1；Package：SOT23；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX84-A),±2(BZX84-B)and approximately±5(BZX84-C)tolerancerange.Theseriesincludes37breakdownvolt

BZX84-B5V1-Q

Marking：R1；Package：TO-236AB；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX84-A),±2(BZX84-B)and approximately±5(BZX84-C)tolerancerange.Theseriesincludes37breakdownvolt

ISL9016IRUNCZ-T

Marking：R1；Package：6LdμTDFN；150mA Dual LDO with Low Noise, High PSRR, and Low IQ

150mADualLDOwithLowNoise,HighPSRR,andLowIQ ISL9016isahighperformancedualLDOcapableofprovidingupto150mAcurrentoneachchannel.ItfeaturesalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto4.7µFwithanESRofupto200mΩ. Features •

NE5500179A-T1

Marking：R1；Package：79A；SILICON POWER MOS FET

4.8VOPERATIONSILICONRFPOWERLDMOSFET FOR1.9GHz1WTRANSMISSIONAMPLIFIERS

PBLS4001D

Marking：R1；Package：SC-74；40 V PNP BISS loadswitch

Features *LowVCEsat(BISS)andresistor-equippedtransistorinonepackage *Lowthresholdvoltage(

PRTR5V0U2X

Marking：R1；Package：SOT143B；Ultra low capacitance double rail-to-rail ESD protection diode

1.Generaldescription Ultralowcapacitancerail-to-railElectroStaticDischarge(ESD)protectiondiodeinasmall SOT143BSurface-MountedDevice(SMD)plasticpackagedesignedtoprotecttwoHi-Speeddata linesorhigh-frequencysignallinesfromthedamagecausedbyESDandothertransients.

PRTR5V0U2X-Q

Marking：R1；Package：SOT143B；Ultra low capacitance double rail-to-rail ESD protection diode

1.Generaldescription Ultralowcapacitancerail-to-railElectroStaticDischarge(ESD)protectiondiodeinasmall SOT143BSurface-MountedDevice(SMD)plasticpackagedesignedtoprotecttwoHi-Speeddata linesorhigh-frequencysignallinesfromthedamagecausedbyESDandothertransients.

PUMF11

Marking：R1；Package：SOT363；NPN resistor-equipped transistor; PNP general purpose transistor

FEATURES •Resistor-equippedtransistorandgeneralpurposetransistorinonepackage •100mAcollectorcurrent •50Vcollector-emittervoltage •300mWtotalpowerdissipation •SOT363package;replacestwoSOT323(SC-70)packageddevicesonsamePCBarea •Reducedpickandplacecosts. APPLIC