丝印：R103G50；Package：SOT-223；DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

文件：1.00465 Mbytes 页数：28 Pages

TI

德州仪器

丝印：R103G50；Package：SOT-223；DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

文件：1.00465 Mbytes 页数：28 Pages

TI

德州仪器

丝印：R103G50；Package：SOT-223；DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

文件：1.00465 Mbytes 页数：28 Pages

TI

德州仪器

丝印：R103G50；Package：SOT-223；DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

文件：1.00465 Mbytes 页数：28 Pages

TI

德州仪器

丝印：R103G50；Package：SOT-223；DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

文件：1.00465 Mbytes 页数：28 Pages

TI

德州仪器