丝印：R104G33；Package：SOT-223；DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

文件：797.31 Kbytes 页数：24 Pages

TI

德州仪器

丝印：R104G33；Package：SOT-223；DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

文件：797.31 Kbytes 页数：24 Pages

TI

德州仪器

丝印：R104G33；Package：SOT-223；DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

文件：797.31 Kbytes 页数：24 Pages

TI

德州仪器

丝印：R104G33；Package：SOT-223；DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

文件：797.31 Kbytes 页数：24 Pages

TI

德州仪器

丝印：R104G33；Package：SOT-223；DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

文件：797.31 Kbytes 页数：24 Pages

TI

德州仪器

丝印：R104G33；Package：SOT-223；DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

文件：797.31 Kbytes 页数：24 Pages

TI

德州仪器

丝印：R104G33；Package：SOT-223；DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

文件：797.31 Kbytes 页数：24 Pages

TI

德州仪器

丝印：R104G33；Package：SOT-223；DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

文件：797.31 Kbytes 页数：24 Pages

TI

德州仪器

丝印：R104G33；Package：SOT-223；DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

文件：797.31 Kbytes 页数：24 Pages

TI

德州仪器

丝印：R104G33；Package：SOT-223；DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

文件：797.31 Kbytes 页数：24 Pages

TI

德州仪器