丝印：R10D；Package：SOT-23(DBV)；REG710xx Buck-Boost Charge Pump with up to 60-mA Output Current

1 Features 1• Wide Input Voltage Range: 1.8 V to 5.5 V • Automatic Step-Up and Step-Down Operation • Low Input Current Ripple • Low Output Voltage Ripple • Minimum Number of External Components—No Inductors • 1-MHz Internal Oscillator Allows Small Capacitors • Shutdown Mode • Thermal and

文件：1.77126 Mbytes 页数：39 Pages

TI

德州仪器

丝印：R10D；Package：SOT-23(DBV)；REG710xx Buck-Boost Charge Pump with up to 60-mA Output Current

1 Features 1• Wide Input Voltage Range: 1.8 V to 5.5 V • Automatic Step-Up and Step-Down Operation • Low Input Current Ripple • Low Output Voltage Ripple • Minimum Number of External Components—No Inductors • 1-MHz Internal Oscillator Allows Small Capacitors • Shutdown Mode • Thermal and

文件：1.77126 Mbytes 页数：39 Pages

TI

德州仪器

丝印：R10D；Package：SOT-23(DBV)；REG710xx Buck-Boost Charge Pump with up to 60-mA Output Current

1 Features 1• Wide Input Voltage Range: 1.8 V to 5.5 V • Automatic Step-Up and Step-Down Operation • Low Input Current Ripple • Low Output Voltage Ripple • Minimum Number of External Components—No Inductors • 1-MHz Internal Oscillator Allows Small Capacitors • Shutdown Mode • Thermal and

文件：1.77126 Mbytes 页数：39 Pages

TI

德州仪器

丝印：R10D；Package：SOT-23(DBV)；REG710xx Buck-Boost Charge Pump with up to 60-mA Output Current

1 Features 1• Wide Input Voltage Range: 1.8 V to 5.5 V • Automatic Step-Up and Step-Down Operation • Low Input Current Ripple • Low Output Voltage Ripple • Minimum Number of External Components—No Inductors • 1-MHz Internal Oscillator Allows Small Capacitors • Shutdown Mode • Thermal and

文件：1.77126 Mbytes 页数：39 Pages

TI

德州仪器

4Mb Advanced LPSRAM (512-kword × 8-bit)

Description The R1LP0408D Series is a family of 4-Mbit static RAMs organized 512-kword × 8-bit, fabricated by Renesas’s high-performance CMOS and TFT technologies. The R1LP0408D Series has realized higher density, higher performance and low power consumption. The R1LP0408D Series offers low pow

文件：292.73 Kbytes 页数：13 Pages

RENESAS

瑞萨

72-Mbit QDR™II SRAM 4-word Burst

Description The R1Q3A7236 is a 2,097,152-word by 36-bit and the R1Q3A7218 is a 4,194,304-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS sixtransistor memory cell. It integrates unique synchronous peripheral circuitry and a burst coun

文件：686.67 Kbytes 页数：34 Pages

RENESAS

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72-Mbit QDR™II SRAM 2-word Burst

Description The R1Q2A7236 is a 2,097,152-word by 36-bit, the R1Q2A7218 is a 4,194,304-word by 18-bit, and the R1Q2A7209 is a 8,388,608-word by 9-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique sy

文件：824.86 Kbytes 页数：36 Pages

RENESAS

瑞萨

72-Mbit DDRII SRAM 2-word Burst

Description The R1Q4A7236 is a 2,097,152-word by 36-bit and the R1Q4A7218 is a 4,194,304-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst

文件：840.69 Kbytes 页数：36 Pages

RENESAS

瑞萨

72-Mbit QDR™II SRAM 4-word Burst

Description The R1Q#A7236 is a 2,097,152-word by 36-bit and the R1Q#A7218 is a 4,194,304-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst co

文件：882.92 Kbytes 页数：39 Pages

RENESAS

瑞萨

72-Mbit DDRII SRAM 2-word Burst

Description The R1Q#A7236 is a 2,097,152-word by 36-bit and the R1Q#A7218 is a 4,194,304-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst

文件：892.62 Kbytes 页数：39 Pages

RENESAS

瑞萨