丝印：R13；SILICON TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD FEATURES • Excellent Low NF in Low Frequency Band • Low Voltage Use • Low Cob : 0.9 pF TYP. • Low Noise Voltage : 90 mV TYP. • Super Mini Mold Package. EIAJ : SC-70

文件：201.84 Kbytes 页数：14 Pages

RENESAS

瑞萨

丝印：R13；WE-MAPI SMT Power Inductor

General Information: Ambient Temperature (referring to IRP) -40 °C up to +85 °C Operating Temperature -40 °C up to +125 °C Storage Conditions (in original packaging)

文件：901.79 Kbytes 页数：8 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：R13；Package：SOT-23；P-Channel Power MOSFET

文件：652.32 Kbytes 页数：4 Pages

PJSEMI

平晶半导体

丝印：R13B；Package：VSSOP；DMOS 400mA Low-Dropout Regulator

FEATURES CAP-FREE DMOS TOPOLOGY: Ultra Low Dropout Voltage: 250mV typ at 400mA Output Capacitor not Required for Stability UP TO 500mA PEAK, TYPICAL FAST TRANSIENT RESPONSE VERY LOW NOISE: 28μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 850μA at IOUT = 400mA Not Enabled: IG

文件：667.83 Kbytes 页数：22 Pages

TI2

德州仪器

丝印：R13B；Package：VSSOP；DMOS 400mA Low-Dropout Regulator

FEATURES CAP-FREE DMOS TOPOLOGY: Ultra Low Dropout Voltage: 250mV typ at 400mA Output Capacitor not Required for Stability UP TO 500mA PEAK, TYPICAL FAST TRANSIENT RESPONSE VERY LOW NOISE: 28μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 850μA at IOUT = 400mA Not Enabled: IG

文件：667.83 Kbytes 页数：22 Pages

TI2

德州仪器

丝印：R13B；Package：VSSOP；DMOS 400mA Low-Dropout Regulator

FEATURES CAP-FREE DMOS TOPOLOGY: Ultra Low Dropout Voltage: 250mV typ at 400mA Output Capacitor not Required for Stability UP TO 500mA PEAK, TYPICAL FAST TRANSIENT RESPONSE VERY LOW NOISE: 28μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 850μA at IOUT = 400mA Not Enabled: IG

文件：667.83 Kbytes 页数：22 Pages

TI2

德州仪器

丝印：R13B；Package：VSSOP；DMOS 400mA Low-Dropout Regulator

FEATURES CAP-FREE DMOS TOPOLOGY: Ultra Low Dropout Voltage: 250mV typ at 400mA Output Capacitor not Required for Stability UP TO 500mA PEAK, TYPICAL FAST TRANSIENT RESPONSE VERY LOW NOISE: 28μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 850μA at IOUT = 400mA Not Enabled: IG

文件：667.83 Kbytes 页数：22 Pages

TI2

德州仪器

丝印：R13B；Package：SOT-23；DMOS 400mA Low-Dropout Regulator

FEATURES CAP-FREE DMOS TOPOLOGY: Ultra Low Dropout Voltage: 250mV typ at 400mA Output Capacitor not Required for Stability UP TO 500mA PEAK, TYPICAL FAST TRANSIENT RESPONSE VERY LOW NOISE: 28μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 850μA at IOUT = 400mA Not Enabled: IG

文件：667.83 Kbytes 页数：22 Pages

TI2

德州仪器

丝印：R13B；Package：SOT-23；DMOS 400mA Low-Dropout Regulator

FEATURES CAP-FREE DMOS TOPOLOGY: Ultra Low Dropout Voltage: 250mV typ at 400mA Output Capacitor not Required for Stability UP TO 500mA PEAK, TYPICAL FAST TRANSIENT RESPONSE VERY LOW NOISE: 28μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 850μA at IOUT = 400mA Not Enabled: IG

文件：667.83 Kbytes 页数：22 Pages

TI2

德州仪器

丝印：R13B；Package：SOT-23；DMOS 400mA Low-Dropout Regulator

FEATURES CAP-FREE DMOS TOPOLOGY: Ultra Low Dropout Voltage: 250mV typ at 400mA Output Capacitor not Required for Stability UP TO 500mA PEAK, TYPICAL FAST TRANSIENT RESPONSE VERY LOW NOISE: 28μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 850μA at IOUT = 400mA Not Enabled: IG

文件：667.83 Kbytes 页数：22 Pages

TI2

德州仪器