丝印：R18；WE-HCMD SMT High Current Flat Wire Inductor

General Information: Ambient Temperature (referring to IRP) -40 °C up to +85 °C Operating Temperature -40 °C up to +125 °C Storage Conditions (in original packaging)

文件：675.18 Kbytes 页数：8 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：R18；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：493.16 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：R18；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：490.7 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：R18；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：486.59 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：R18；WE-XHMA SMT Power Inductor

General Information: Ambient Temperature (referring to IR) -40 up to +85 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：849.44 Kbytes 页数：8 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：R18；Package：DFN1006-2；1-Line Ultra Low Capacitance Bi-directional TVS Diode

文件：1.04695 Mbytes 页数：4 Pages

APMICROApplied Power Microelectronics Co.,Ltd.

应能江苏应能微电子股份有限公司

丝印：R1820502PYE；Package：HTSSOP；TPS7H4001-SP Radiation-Hardness-Assured 3-V to 7-V Input 18-A Synchronous Buck Converter

1 Features • Radiation performance: – Radiation-hardness-assured up to TID 100 krad(Si) – SEL, SEB, and SEGR immune to LET = 75 MeV-cm2/mg – SET and SEFI characterized up to LET = 75 MeV-cm2/mg • Peak efficiency: 95.5 (VO = 1 V at 100 kHz) • Power rail: 3 V to 7 V on VIN • Flexible switc

文件：3.28597 Mbytes 页数：66 Pages

TI

德州仪器

丝印：R1822201P；Package：TSSOP；TPS7H500x-SP Radiation-Hardness-Assured 2-MHz Current Mode PWM Controllers

1 Features • Radiation performance: – Radiation hardness assured (RHA) up to TID 100 krad(Si) – SEL, SEB, and SEGR immune to LET = 75 MeV-cm2/mg – SET and SEFI characterized up to LET = 75 MeV-cm2/mg – No cross-conduction events for controller outputs observed during SET characterization

文件：4.30599 Mbytes 页数：83 Pages

TI

德州仪器

丝印：R1822201P；Package：TSSOP；TPS7H500x-SP Radiation-Hardness-Assured 2MHz Current Mode PWM Controllers

1 Features • Radiation performance: – Radiation hardness assured (RHA) up to TID 100krad(Si) – SEL, SEB, and SEGR immune to LET = 75MeV-cm2/mg – SET and SEFI characterized up to LET = 75MeV-cm2/mg – No cross-conduction events for controller outputs observed during SET characterization •

文件：4.37588 Mbytes 页数：84 Pages

TI

德州仪器

丝印：R1822201P；Package：TSSOP；TPS7H500x-SP Radiation-Hardness-Assured 2MHz Current Mode PWM Controllers

1 Features • Radiation performance: – Radiation hardness assured (RHA) up to TID 100krad(Si) – SEL, SEB, and SEGR immune to LET = 75MeV-cm2/mg – SET and SEFI characterized up to LET = 75MeV-cm2/mg – No cross-conduction events for controller outputs observed during SET characterization •

文件：4.33994 Mbytes 页数：84 Pages

TI2

德州仪器